Generation 3: Improved performance at lower cost

Cousins, P.J.; Smith, David D.; Luan, Hsin-Chiao; Manning, Jane; Dennis, Tim; Waldhauer, Ann; Wilson, Karen E.; Harley, G.; Mulligan, William P.

doi:10.1109/pvsc.2010.5615850

Cited by 190 publications

(104 citation statements)

References 2 publications

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“…This cell was fabricated from a n-type Cz wafer. Of note, the most recent results for such interdigitated back-contacted solar cells were obtained using "passivating contacts", likely explaining the impressive V oc values, but of which further details are undisclosed [157]. Table 3.…”

Section: Device Resultsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

765

352

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Section: Device Resultsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

765

352

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“…The normalized resistance components associated with the heterocontacts are calculated according to (5). Modifying (5) to account for carrier collection below the contacts over a region wide as the transfer length L t ( c ), the conclusions from Section III-D remain unchanged…”

Section: Appendixmentioning

confidence: 99%

“…Despite the fact that tunneling may play an important role in carrier transport, the FF in SHJ devices has been empirically shown not to suffer from any significant fundamental limitation [2], compared with best homojunction technologies as passivated emitter, rear locally diffused [4] and back-contacted [5] solar cells. However, standard two-side contacted front-emitter silicon heterojunction (Std-SHJ) solar cells are limited by parasitic absorption of light, either in the a-Si:H films or the transparent conductive oxide (TCO).…”

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confidence: 99%

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Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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Abstract-We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high shortcircuit current densities close to 40 mA/cm 2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

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“…Despite the high material cost, this technology has remained competitive due to several manufacturing improvements such as enhancements in wire cutting techniques that have reduced the wafer thickness and also the production of kerfless wafers. Recently, Sunpower announced an efficiency of 24.2 % for a large 155 cm 2 silicon cell fabricated on an n-type Czochralski grown wafer (Cousins et al, 2010). The fact that mono-c-Si modules are produced with relatively expensive manufacturing techniques initiated a series of efforts for the reduction of the manufacturing cost.…”

mentioning

confidence: 99%