Geometrical parameters influence on the Hall effect sensors offset and drift

Paun, Maria‐Alexandra; Sallèse, Jean-Michel; Kayal, Maher

doi:10.1109/prime.2011.5966238

Cited by 22 publications

(29 citation statements)

References 8 publications

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“…Using an automated measurement setup presented in detail by the authors in a recent paper [6], the proposed Hall cells have been tested and subsequently evaluated. In this sense eleven samples, each one containing 64 cells (the first eight different geometries in Table 1 times eight locations), were tested.…”

Section: Room Temperature Offset Measurement Results Using An Automatmentioning

confidence: 99%

“…In order to accurately test the Hall Effect sensors, an automated measurements setup has been built [6]. Previous papers in the literature were devoted to Hall sensors current measurements [10].…”

Section: Hall Effect Sensor Measurementsmentioning

confidence: 99%

“…To achieve good results while still preserving the integration process, the sensors geometrical configuration is to be exploited [4,5]. As the extensive measurements performed and presented by the authors [6] prove, there is offset variance with geometry. The project specifications, a few times better than the actual OPEN ACCESS state-of-the-art in terms of offset and its drift, have been reached and various good candidates have been revealed.…”

Section: Introductionmentioning

confidence: 99%

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Hall Effect Sensors Design, Integration and Behavior Analysis

Paun

Sallèse

Kayal

2013

JSAN

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Abstract:The present paper focuses on various aspects regarding Hall Effect sensors' design, integration, and behavior analysis. In order to assess their performance, different Hall Effect geometries were tested for Hall voltage, sensitivity, offset, and temperature drift. The residual offset was measured both with an automated measurement setup and by manual switching of the individual phases. To predict Hall sensors performance prior to integration, three-dimensional physical simulations were performed.

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Section: Room Temperature Offset Measurement Results Using An Automatmentioning

confidence: 99%

Section: Hall Effect Sensor Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hall Effect Sensors Design, Integration and Behavior Analysis

Paun

Sallèse

Kayal

2013

JSAN

Self Cite

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“…where n and d are the doping concentration and the thickness of the n-well respectively, G is a geometrical correction factor and s H is the scattering factor of silicon usually 1.15 [7]. Reducing the thickness d of the Hall cell, not only a higher V H is obtained but also a lower cross-talk effect respect to the other magnetic field directions.…”

Section: Hall Cells Designmentioning

confidence: 99%

Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

Palumbo

Marchesi

Chiesi

et al. 2013

EPJ Web of Conferences

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Abstract. This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field H c <10A/m and saturation magnetization (µ 0 M S ) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

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“…Various designs for CMOS Hall devices were proposed and their behavior tested in [11][12]. Low magnetic-equivalent residual offset (less than 30 mT at room temperature) and offset temperature drift (less than 7 0.3 mT/1C) values were obtained with specific Hall devices structures, such as the XL device [13].…”

Section: Introductionmentioning

confidence: 99%