Hall Effect Sensors Design, Integration and Behavior Analysis

Abstract

Abstract:The present paper focuses on various aspects regarding Hall Effect sensors' design, integration, and behavior analysis. In order to assess their performance, different Hall Effect geometries were tested for Hall voltage, sensitivity, offset, and temperature drift. The residual offset was measured both with an automated measurement setup and by manual switching of the individual phases. To predict Hall sensors performance prior to integration, three-dimensional physical simulations were performed.

CMOS Vertical Hall Magnetic Sensors on Flexible Substrate

“…However, this capability to detect multiple parameters also means that it is difficult to measure the desired parameter when multiple stimuli are simultaneously present. Therefore, the piezoresistive effect must be compensated or accounted for to accurately measure the magnetic field strength when the sensor is mechanically deformed [26], [27].…”

Towards bendable CMOS magnetic sensors

“…where G is the geometrical correction factor, r H (Si) = 1.15 the scattering factor, n and h the doping and thickness of the N-well and S I the current-related sensitivity [13]. Deformations can induce considerable mechanical stress in CMOS Hall-effect sensors via the piezo-Hall effect, [16], and may change the magnetic sensitivity.…”

“…C 1 −C 3 ), the carriers will be deviated by the Lorentz force [14] and a Hall voltage V H appears between the other two contacts (C 2 −C 4 ) [15]. The output voltage is directly proportional to the applied magnetic field [13] …”

“…Since a Hall sensor is both magnetic-and stress-sensitive, it can be used in both cases. However, in order to determine accurately the magnetic field strength when the sensor is deformed mechanically, the piezoresistive effect [17] must be compensated, [13], [18].…”

“…At each end of the cross there are four contact regions highly N+ doped to reduce the contact resistances in the source and drain formation processing step for n-type MOSFETs. The lateral dimensions (L, W ) are chosen so as to obtain high output accuracy (W/2L ∼ = 1.31) [13].…”