1993
DOI: 10.1111/j.1151-2916.1993.tb04015.x
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Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass

Abstract: Isothermal growth of P-Si,N, crystals dispersed in an oxynitride glass (Y-Si-AI-0-N) was studied by electron microscopy after heat treatment at temperatures between 1550" and 1640°C for 1 to 18 h. The P-crystals exhibited growth striations introduced by intermediate coolings and these striations were used for developing a sophisticated technique for analysis of growth. It was determined that a/p-transformation and Ostwald ripening can be treated as different kinetic stages of grain growth, while p-nucleation w… Show more

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Cited by 122 publications
(66 citation statements)
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“…The rates are highly anisotropic, with preferred growth parallel to the c-axis, yielding long grains with strongly faceted prism faces. 212 …”
Section: (7) Equilibrium Intergranular and Surficial Filmsmentioning
confidence: 99%
See 1 more Smart Citation
“…The rates are highly anisotropic, with preferred growth parallel to the c-axis, yielding long grains with strongly faceted prism faces. 212 …”
Section: (7) Equilibrium Intergranular and Surficial Filmsmentioning
confidence: 99%
“…The lanthanide glass samples used either yttrium-aluminum-(YAl-) or lanthanum-aluminum-(LaAl-) doped silicon oxynitride (SiON) glass. 212 The calcium-doped SiON glass-Si 3 N 4 samples were made by Tanaka. 180,213 The oxygen content was 1.3 wt% and the calcium concentration was 450 ppm, with no other cation impurities detected.…”
Section: (B) In Situ Dispersion Force Determination By Sr-veelsmentioning
confidence: 99%
“…However, only one island is formed for an individual surface position at the triple junction. 15,26 In the present material, the islands involved a large number and almost covered the entire grain surface. On a microscopic scale, the growth of these domains seems to be reaction-controlled because of the kinked (100) surfaces.…”
Section: Discussionmentioning
confidence: 65%
“…For the 1.5 h-sample, large amount of elongated grains with high aspect ratio and homogeneous distribution could be achieved. The β-Si 3 N 4 seed crystals show a very slow growth rate of the prism planes, the grain diameter direction, in comparison to the growth rate of the basal plane, the grain length direction, which was due to the atomically "rough" basal plane [24]. However, further increase of dwell time (2 h) results in large diameter of β-Si 3 N 4 crystals.…”
Section: Experiments Proceduresmentioning
confidence: 96%