Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

Aristov, V. Yu.; Urbanik, G.; Kummer, K.; Vyalikh, D. V.; Молодцова, О. В.; Preobrajenski, Alexei; Zakharov, Alexei; Heß, Christian; Hänke, Torben; Büchner, B.; Vobornik, I.; Fujii, Jun; Panaccione, G.; Ossipyan, Yuri A.; Knupfer, M.

doi:10.1021/nl904115h

Cited by 189 publications

(131 citation statements)

References 33 publications

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“…[30][31][32] The step direction on the substrate was close to [110], as shown in Figure 1. Raman spectroscopy, scanning tunneling microscopy (STM), low energy electron microscopy (LEEM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES) were used to characterize the synthesized trilayer graphene.…”

Section: Resultsmentioning

confidence: 93%

“…1 Although mechanical exfoliation of graphene from graphite is an effective and successful sample preparation method for fundamental research, it is found that roughly 60% of trilayer samples prepared this way have a pure ABA stacking order, while the remainder exhibit mixed ABA-ABC stacking orders. Alternatively, chemical vapor deposition, 27,28 and vacuum synthesis on silicon carbide surfaces [29][30][31][32] are excellent ways to fabricate large-area few-layer and monolayer graphene. It is known that the graphene produced by these techniques typically contains domainboundaries, [30][31][32][33][34][35] which can considerably modify the electronic transport in the graphene.…”

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confidence: 99%

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Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Чайка

Huang

et al. 2015

ACS Nano

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Graphene is a single-atom-thick carbon sheet with extraordinary properties unrivalled by any other known material, 1À7 which will likely lead to a revolution in many areas of technology. 8 It displays linear band dispersion, 9,10 massless Dirac Fermions, 11 and extremely high mobility. 12 Potentially, graphene-based electronics could consist of just one or a few layers of graphene; however, the absence of a band gap presents a conundrum for the implementation of conventional device architectures, similar to those based on semiconducting materials. 13À18 Several methods have been proposed for opening band or transport gaps in graphene, such as patterning single-layer graphene into narrow ribbons, 19 introducing nanoholes into the graphene sheets, 20 applying a perpendicular

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Section: Resultsmentioning

confidence: 93%

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confidence: 99%

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Чайка

Huang

et al. 2015

ACS Nano

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“…[[qv: 3a]] For example, graphene, a monolayer of carbon with a honeycomb lattice structure, is the first 2D material fabricated in the world. Nowadays, it is convenient to fabricate graphene through various methods such as exfoliation routes,5 chemical vapor deposition (CVD),6 carbon segregation,7 and epitaxial growth 8. Moreover, the modulation of electronic properties of graphene via doping9 or decoration10 has been demonstrated in many works.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Single‐Crystalline Boron Nanosheets for Enhanced Electro‐Optical Performances

et al. 2015

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Large‐scale single‐crystalline ultrathin boron nanosheets (UBNSs, ≈10 nm) are fabricated through an effective vapor–solid process via thermal decomposition of diborane. The UBNSs have obvious advantages over thicker boron nanomaterials in many aspects. Specifically, the UBNSs demonstrate excellent field emission performances with a low turn‐on field, E to, of 3.60 V μm−1 and a good stability. Further, the dependence of (turn‐on field) E to/(threshold field) E thr and effective work function, Φ e, on temperature is investigated and the possible mechanism of temperature‐dependent field emission phenomenon has been discussed. Moreover, electronic transport in a single UBNS reveals it to be an intrinsic p‐type semiconductor behavior with carrier mobility about 1.26 × 10−1 cm2 V−1 s−1, which is the best data in reported works. Interestingly, a multiconductive mechanism coexisting phenomenon has been explored based on the study of temperature‐dependent conductivity behavior of the UBNSs. Besides, the photodetector device fabricated from single‐crystalline UBNS demonstrates good sensitivity, reliable stability, and fast response, obviously superior to other reported boron nanomaterials. Such superior electronic‐optical performances are originated from the high quality of single crystal and large specific surface area of the UBNSs, suggesting the potential applications of the UBNSs in field‐emitters, interconnects, integrated circuits, and optoelectronic devices.

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“…Additionally, 3C-SiC is the only polytype that can be heteroepitaxially grown on large-scale Si wafer, which makes 3C-SiC on Si wafer a relatively cheaper platform for applications of sensor, 6,7 graphene growth 8 or GaN based LED. 9 Growth of 3C-SiC films on Si substrates is usually conducted in conventional chemical vapor deposition equipment (c-CVD).…”

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confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

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Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates.

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Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

Cited by 189 publications

References 33 publications

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Transport Gap Opening and High On–Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Ultrathin Single‐Crystalline Boron Nanosheets for Enhanced Electro‐Optical Performances

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

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