Growth and anisotropy of transport properties of detached Cd0.78Zn0.22Te crystals

Gamal, G. A.; Zied, M. Abou; Ebnalwaled, A. A.

doi:10.1016/j.jallcom.2006.05.042

Cited by 10 publications

(4 citation statements)

References 28 publications

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“…This also may be due to existing of the “two-dimensional defects” placed between layers and responsible for the carrier transition across the layers. This interpretation has been already anticipated in similar layer compounds [35]. Figure 4 shows the Hall coefficient against the temperature in the two directions of the single crystal.…”

Section: Resultssupporting

confidence: 79%

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis, respectively. The Hall effect and the electrical conductivity were determined in terms of temperature, parallel and orthogonal to the layer surface, and the parameters proved to be strongly anisotropic. From carried out measurements, different parameters such like the carrier mobilities, the carrier concentration, the relaxation time, the diffusion coefficient, and the length of diffusion for both, majority carriers and minority carriers were estimated.

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Section: Resultssupporting

confidence: 79%

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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“…Then the filled ampoule was sealed under dynamic vacuum of $10 À4 Pa. After that the sealed ampoule was loaded into the furnace. The growth experiment took place in a modified traveling solvent method (TSM) technique, more details about this technique can be seen in [15]. Before each experiment the furnace was calibrated.…”

Section: Crystal Growthmentioning

confidence: 99%

Evolution of growth and enhancement in power factor of InSb bulk crystal

Ebnalwaled

2009

Journal of Crystal Growth

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“…Also, CdTe detectors reflect high leakage currents and polarization. CdZnTe (CZT) semiconductor crystals, formed by alloying CdTe with Zn [4][5][6][7], whereas have high bulk resistivity. This high resistivity is because of the large band gap of this ternary semiconductor.…”

Section: Introductionmentioning

confidence: 99%