Growth and characterization of InGaN by RF-MBE

Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

“…This is indicative of [0001]-oriented hexagonal InN phase, which is attributed to the phase separation. As a matter of fact, the appearance of high In-content phase has been reported in InGaN film grown under Ga-rich conditions, 11 and attributed to the high diffusion rates of indium on the surface. This feature of phase separation in InGaN films could reveal some interesting optical behaviors.…”

Low-temperature growth of InGaN films over the entire composition range by MBE

“…A precise control and optimization of the III/N ratio and the growth temperature is required to obtain single-phase, high-quality InGaN films. The growth of single-phase InGaN by molecular beam epitaxy (MBE) has been previously reported using various approaches [5][6][7][8]. Metal-rich growth favors a 2D growth mode, which promotes smoother surfaces but results in compositional alloy fluctuations and high threading dislocation densities [5,6].…”

“…Metal-rich growth favors a 2D growth mode, which promotes smoother surfaces but results in compositional alloy fluctuations and high threading dislocation densities [5,6]. On the other hand, N-rich growth leads to more uniform InGaN alloys but reduces surface adatom mobility, resulting in 3D growth mode and grain-like morphology [6][7][8]. The structural and optical properties of InGaN films also strongly depend on growth temperature [9].…”

“…The experimental data points follow a linear behavior with a slope equal to one. This slope can be interpreted as the incorporation efficiency of In into the InGaN layer, which depends on the desorption and the segregation of In atoms[8,15]. At the low substrate temperatures used for these growths, desorption of In atoms from the surface is negligible.…”

Dielectric function and bowing parameters of InGaN alloys

“…Prior to the InGaN epitaxy, GaN buffer layers of $15 nm thickness were grown on the GaN/sapphire templates in order to produce a reproducible surface. The growth details for SB series samples were published elsewhere [7]. The In content and strain state for the In 1Àx Ga x N alloys were evaluated from X-ray diffraction measurements.…”