2013
DOI: 10.1016/j.jallcom.2013.05.081
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Growth mechanism and magnetism of CoFe2O4 thin films; Role of the substrate

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Cited by 15 publications
(14 citation statements)
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“…It is noted that such an ilmenite structure is a confirmed multiferroic material [30] that shows significant promise for strong coupling of the electric and magnetic moments. In this case, however, the introduction of such an interfacial layer effectively inhibits the elastic interaction of the separate magnetoelectric components and thus reduces the magnetic moment of the spinel thin film, as previously published [1].…”
Section: Resultssupporting
confidence: 55%
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“…It is noted that such an ilmenite structure is a confirmed multiferroic material [30] that shows significant promise for strong coupling of the electric and magnetic moments. In this case, however, the introduction of such an interfacial layer effectively inhibits the elastic interaction of the separate magnetoelectric components and thus reduces the magnetic moment of the spinel thin film, as previously published [1].…”
Section: Resultssupporting
confidence: 55%
“…The impact of the growth of the film on the highly polar BaTiO 3 substrate is demonstrated well in Figure 1(a) where contrast variations due to strain effects are extended over 100 nm into the substrate. The film is epitaxially grown (also revealed by XRD [1]) and it proceeds with a columnar character. The strain induced by the 7% lattice mismatch is com- pensated by minor rotations of unit cells and dislocations.…”
Section: Resultsmentioning
confidence: 99%
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“…The diffraction peaks that appear in Figure 3 (Figure 1) differed from the CoFe 2 O 4 in the trilayer (Figure 3), which occurs because of differences in the structure and morphology of the material substrate. Axelsson, et al [22] have shown that the structure and magnetic properties of thin-layer CoFe 2 O 4 are influenced by the type of substrate material.…”
Section: Resultsmentioning
confidence: 99%
“…Usually, these oxides present low Neel temperatures (about 4 K) [3], high melting points (higher than 2400 K) [4], excellent crystal quality [5], and stability under chemical attack [6], making them appropriate and desired to applications as substrates for the epitaxial growth of thin films. Indeed, several works reported the features of thin films grown on, mainly, LaAlO 3 and NdAlO 3 substrates [7,8]. In all cases, there is a role of these substrates in the strain-induced properties.…”
Section: Introductionmentioning
confidence: 99%