2016
DOI: 10.1088/2053-1591/3/7/075009
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Growth mechanism of largescale MoS2monolayer by sulfurization of MoO3film

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Cited by 47 publications
(43 citation statements)
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“…These films, along with S were placed in consecutive zones inside a quartz furnace tube. A simplified diagram depicting the fabrication scheme [19] can be found in the Supplementary Materials in Figure S3. Zone 1 contained ~4 to 8 mg of S and was placed 30 cm upstream from zone 2, which held the WO 3 film.…”
Section: Methodsmentioning
confidence: 99%
“…These films, along with S were placed in consecutive zones inside a quartz furnace tube. A simplified diagram depicting the fabrication scheme [19] can be found in the Supplementary Materials in Figure S3. Zone 1 contained ~4 to 8 mg of S and was placed 30 cm upstream from zone 2, which held the WO 3 film.…”
Section: Methodsmentioning
confidence: 99%
“…For these applications, it is necessary to develop reproducible and economic synthetic routes with a high degree of control over the crystal quality and size. A variety of synthetic approaches have been developed for the growth of TMD monolayers including chemical vapor deposition (CVD) [13][14][15], physical vapor deposition [16,17], sulfurization of precursor films [18][19][20][21], metal organic chemical vapor deposition [22,23], etc. Among these approaches, the CVD based synthesis is the most simple and cost effective one for the growth of single crystalline TMD monolayers.…”
Section: Introductionmentioning
confidence: 99%
“…In order to successfully extend the usage of these materials from laboratory to real-life applications, large scale and cost-effective production methods are required. During the past years, several bottom-up [14,[19][20][21][22][23][24][25][26][27][28] and top-down [29][30][31][32][33][34][35] strategies for the fabrication of atomically thin films have been developed. As has already been proven in the case of graphene, chemical vapour deposition (CVD) method is compatible with industry providing large area high quality material suitable for optoelectronic applications [36].…”
Section: Introductionmentioning
confidence: 99%