Growth of high quality InGaAsN heterostructures and their laser application

Abstract

Focus of this work is the optimization of growth to achieve high quality laser material for emission at 1.3 mm and beyond. GaAs/GaAsN/InGaAsN heterostructures were grown by solid source molecular beam epitaxy. To achieve optimum crystal quality of InGaAsN heterostructures, growth was followed by a high temperature treatment at about 7008C. The high optical quality of our annealed material is attested by large exciton recombination lifetimes (more than 2 ns). Consequently, a decrease of single quantum well transparency current density down to 100 A/cm 2 is found and SWQ lasers with threshold current densities as low as 350 A/cm 2 have been made. This represents clearly the lowest laser thresholds reported so far for emission around 1.3 mm from the InGaAsN material system.

Low threshold InGaAsN/GaAs lasers beyond 1500nm

“…This rise in PL intensity is accompanied by an increase in PL wavelength. Xray diffraction on ternary reference samples reveals an increased N-incorporation which has also been reported by other authors [6,7] and is a clear indication that under higher As fluxes the N incorporation is limited by the competition between the group V elements. The same increase in the N content of InGaAsN quantitatively explains the redshift in PL wavelength.…”

MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors

“…There are several reports in the literature, where the N-incorporation mechanisms in dilute nitrides are controversially discussed [37][38][39][40][41][42][43][44][45]. The present paper tries to reconcile this controversy by studying the N-incorporation in great detail by varying the temperature, the V/III-ratio, the V/V-ratio, the growth rate, the reactor pressure, the chemical composition as well as the strain-state of the Ga(NAs) and (GaIn)(NAs) films also for different N-precursor molecules.…”

Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime

“…Previously, we demonstrated 1317-nm emitting InGaAsNGaAsN lasers with improved threshold current density and T 0 compared to GaAs barrier structures [13]. Other reports, using MBE grown material, by Egorov et al also demonstrated improved threshold current, but degraded T 0 values for their single QW InGaAsN-GaAsN lasers [14].…”