Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition

Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy

“…Under electron injection the maximum resistivity is on the order of 10 4 ⍀ cm, which is comparable to the value reported for MOVPE grown InP:Ru using PH 3 as precursor. 4 It appears that the resistivity can be increased by increasing the Ru concentration, however, the tendency for saturation in resistivity apparent in this study for the n ϩ /InP:Ru/n ϩ could also indicate difficulties in incorporating Ru as active centers. When PH 3 is used, PH 3 -Ru pre-reactions were attributed to the low incorporation of Ru.…”

“…An attractive alternative dopant would be the thermally very stable transition metal ruthenium, which has been recently investigated by Dadgar and co-workers. [3][4][5] Ruthenium has been shown to be stable as regards the above-mentioned interdiffusion with p-type dopants and to introduce several deep levels suitable for compensating electrons and holes. 3 Especially for the realization of buried heterostructure lasers having very high frequency modulation bandwidth the hydride vapor phase epitaxy ͑HVPE͒ technique is suitable, owing to its inherent strength in selective regrowth of very thick SI-InP ͑у5 m͒ layers.…”

“…Such is not the case with TBP ͑tertiary butyl phosphine͒ or DTBP ͑ditertiary butyl phosphine͒, which when used as precursors enhanced the incorporation of Ru; the n ϩ /InP:Ru/n ϩ structure grown using these precursors have very high resistivity (Ͼ1 ϫ 10 7 ⍀ cm. 4 The behavior is significantly different for the p ϩ /InP:Ru/p ϩ structure, also shown in Fig. 1, where the resistivity is above 10 10 ⍀ cm in the whole voltage range up to 40 V. When the doping concentration is increased from 2.4 ϫ 10 17 to 5.2 ϫ 10 17 cm Ϫ3 , the resistivity of the p ϩ /InP:Ru/p ϩ structure slightly decreases from 3 ϫ 10 10 to 1.5 ϫ 10 10 ⍀ cm, and that of the n ϩ /InP:Ru/n ϩ structure increases from 2 ϫ 10 1 to 1 ϫ 10 4 ⍀ cm in the doping range 1.2 ϫ 10 17 to 5.2 ϫ 10 17 cm Ϫ3 .…”

Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

“…This prevents BH-lasers from operating at high temperatures owing to the increase in the leakage current through the blocking layers. In recent years, Ru-doped InP (Ru-InP) was a focus of interest as a good semi-insulating dopant in InP [3,4]. Ru does not cause inter-diffusion with p-type dopants [5].…”

Development and characterisation of improved ruthenium dopant sources

“…Growth of Ru-doped InP by metal organic vapour phase epitaxy (MOVPE) has been demonstrated previously using the conventional precursor bis(dimethylpentadienyl) ruthenium (DMRU) at low pressure [3]. However, for atmospheric pressure MOVPE the physical characteristics of this precursor lead to limitations in its usefulness.…”