Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks

“…It was previously reported that the parasitic capacitance can be decreased by inserting a thick Fe-doped semi-insulating InP layer (si-InP) (i.e., si-(1 μm thick)/n-InP, si-(1 μm thick)/n-/si-(1.5 μm thick)/n-InP, and p-/n-/si-(1.5 μm thick)/n-InP) [8]. However, the use of an Fe-doped si-InP layer increases the leakage current outside the active region because of the strong inter-diffusion with p-type dopants [9,10]; moreover, the insertion of an si-InP layer between the n-InP layers requires a change in the reactor during the growth of the current blocking layers, which in turn increases the fabrication complexity and cost.…”