Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

Nozaki, C.; Ohba, Yasuo; Sugawara, Hideto; Yasuami, S.; Nakanisi, Takatosi

doi:10.1016/0022-0248(88)90560-x

Cited by 70 publications

(13 citation statements)

References 8 publications

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“…3(a) and (b). These structures are the same as those proposed for the long-range-ordered structures by Nozaki, Ohba, Sugawara, Yasuami & Nakanisi (1988) and Suzuki, Gomyo & Iijima (1988).…”

Section: Resultssupporting

confidence: 58%

Diffuse X-ray scattering study of sublattice ordering among Group III atoms in In0.5Ga0.5P and In0.5Al0.5P

Yasuami¹,

Koga²,

Ohshima³

et al. 1992

J Appl Cryst

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The intensity of superstructure reflections and associated diffuse scattering from Ino.sGao.sP and Ino.sAlo.sP epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The WarrenCowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.

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“…3(a) and (b). These structures are the same as those proposed for the long-range-ordered structures by Nozaki, Ohba, Sugawara, Yasuami & Nakanisi (1988) and Suzuki, Gomyo & Iijima (1988).…”

Section: Resultssupporting

confidence: 58%

Diffuse X-ray scattering study of sublattice ordering among Group III atoms in In0.5Ga0.5P and In0.5Al0.5P

Yasuami¹,

Koga²,

Ohshima³

et al. 1992

J Appl Cryst

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“…From the STM images here, the InGaP layer does not display obvious ordering. Previous studies reveal that the 4K PL emission will change from 1.98 eV to 1.91 eV when InGaP layer goes from fully disordered to partially ordered [12]. PL spectra from an InGaP sample with identical growth condition to the sample used here shows a peak energy of 1.97 eV [9].…”

mentioning

confidence: 62%

“…Ordering of the alloy is an important phenomenon for InGaP. It has been found that, under certain growth conditions, the cations (Ga and In) are ordered on ( 1 11) or (1 1 1) planes [8,12]. From the STM images here, the InGaP layer does not display obvious ordering.…”

mentioning

confidence: 77%

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Yang

Feenstra

Semtsiv

et al. 2004

Applied Physics Letters

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Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have been investigated by cross-sectional scanning tunneling microscopy and spectroscopy. Images inside the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region at the interfaces is observed, with indium carryover identified at the GaAs-on-InGaP interface. Spatially resolved tunneling spectra with nanometer spacing across the interface were acquired, from which band offsets (revealing that nearly all of band offset occurs in the valence band) were determined.Heterojunctions between In x Ga 1-x P (hereafter InGaP) and GaAs have attracted attention recently because of their device applications. It has been predicted and confirmed that this system should have a large fraction of the total energy gap discontinuity occurring in the valence band, which improves the electron injection efficiency of an heterojunction bipolar transistor (HBT) [1]. However, there exist discrepancies between band offsets results obtained by different techniques for samples grown by different methods/groups. It is known that properties of the interface depend sensitively on the detailed growth conditions [2][3][4][5][6]. Prior experimental techniques used in this system are not spatially resolved and in order to better understand this material system a study of the atomic-scale structural and electronic properties of the junctions is useful.In this work we use scanning tunneling spectroscopy (STS) to study the spatial variation of the InGaP/GaAs electronic band structure at nanometer length scales. The advantage of such work is that band offsets can be measured while simultaneously imaging the atomic-scale structural properties of the interfaces. Due to the experimental challenges of measuring band offsets by STS, there are only a few prior examples of such work, most notably on AlGaAs/GaAs [7]. Liu et al. have used cross-sectional STM to study the ordering effect of InGaP [8]. In this paper, we report cross-sectional STM and STS studies of compositionally abrupt InGaP/GaAs heterojunctions prepared by gassource molecular beam epitaxy (GSMBE). Images inside the InGaP layer reveal a random arrangement of In and Ga atom. This result is consistent with PL results and growth conditions for similar samples that indicate a nearly fully disordered InGaP layer [9]. It is found that GaAs-on-InGaP interface has a slightly wider transition region and more interface intermixing than the InGaP-on-GaAs interface. Both interfaces exhibit InGaAs-like properties. Indium outdiffusion from InGaP into GaAs at the GaAs-onPublished in Appl. Phys. Lett. 84, 227 (2004).

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“…7 Depending on growth conditions, InGaP can exist either an ordered arrangement of cations or a disordered one, with band gaps of these forms differing by about 0.05 eV. 8 The InGaP studied in the present work is of the disordered variety, 9 with room-temperature band gap of about 1.90 eV. 10 The CB offset between InGaP and GaAs is known to be relatively small, [i.e.…”

Section: Introductionmentioning

confidence: 99%

Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

Yang

Feenstra

Semtsiv

et al. 2008

Journal of Applied Physics

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Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using 3-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90 eV, appropriate to the disordered InGaP alloy, a valence band offset of eV 01 . 0 38 . 0 ± is deduced along with the corresponding conduction band offset of eV 01 . 0 10 . 0 ± (type I band alignment).Published in J. Appl. Phys. 103, 073704 (2008).2

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Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

Cited by 70 publications

References 8 publications

Diffuse X-ray scattering study of sublattice ordering among Group III atoms in In0.5Ga0.5P and In0.5Al0.5P

Diffuse X-ray scattering study of sublattice ordering among Group III atoms in In0.5Ga0.5P and In0.5Al0.5P

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy

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