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The structure of In1−y (Alx Ga1−x )y P semiconductor alloy systems was studied by electron diffraction. Varied distribution of diffuse scattering and superstructure reflections was observed. The pertinent ordered structure is dependent on growth parameters, but not on the alloy systems. The diffuse scattering could be attributed to mean square atomic displacements due to the coexistence of different column III atoms in the same sublattice.

Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor depositionHigh concentration Zn doping in InP grown by lowpressure metalorganic chemical vapor deposition

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