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The structure of In1−y (Alx Ga1−x )y P semiconductor alloy systems was studied by electron diffraction. Varied distribution of diffuse scattering and superstructure reflections was observed. The pertinent ordered structure is dependent on growth parameters, but not on the alloy systems. The diffuse scattering could be attributed to mean square atomic displacements due to the coexistence of different column III atoms in the same sublattice.

Wavelength-dispersive total reflection X-ray fluorescence (WD-TXRF) equipment supported by an energy-dispersive (ED) solid-state detector (SSD) has been developed and installed in the BL16XU Industrial Consortium ID Beamline for Material Research at the SPring-8 synchrotron radiation research facility. Equipment specifications are given and results from our initial experiment are discussed in this paper. In the experiment on the sensitivity of detection of metallic impurities on a Si wafer, the lower limit of detection (LLD) using a Ge-SSD reached an order of 108 atoms/cm2 with a corresponding absolute weight of approximately 10 fg for ED-TXRF. In comparison, an order of 109 atoms/cm2 with a corresponding weight of around 100 fg was obtained for WD-TXRF for the first time. Although ED-TXRF still has a lower LLD, using WD-TXRF can provide good energy resolution with a high count rate, opening up a new field of X-ray fluorescence measurement.

Two kinds of diffuse x-ray scattering were found in a very perfect silicon single crystal. One of them forms a cigar shape, extending along the [111] direction. The other is a disk shape whose normal is also parallel to the [111] direction in reciprocal space. Both diffuse scatterings are predominant along the crystal pulling [111] direction. From simple Fourier inversion of the shapes of the diffuse scatterings, it is concluded that the platelike defects and needlelike defects are the origins of the diffuse scatterings. The platelike defects observed differ from those observed by Patel for Czochralski silicon with heat treatment.