Hall Effect in Graphite and Its Relation to the Trigonal Warping of Energy Bands. I. Experimental

Oshima, Hisashi; Kawamura, Kiyoshi; Tsuzuku, Takuro; Sugihara, Kō

doi:10.1143/jpsj.51.1476

Cited by 14 publications

(5 citation statements)

References 11 publications

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“…The low-field coefficient of different Kish graphite samples was reported in Ref. 15. For the "best" Kish sample, defined as the one with the largest resistivity ratio ρ(300)/ρ(4.2), the Hall coefficient was positive at low fields and turned to negative at µ 0 H ≃ 0.6 T at 4.2 K, similarly to the results for some of the graphite samples reported in Ref.…”

Section: Introductionsupporting

confidence: 82%

“…16,17 Interestingly, the lesser the perfection of the Kish graphite samples the larger was the field where the Hall coefficient changed sign. 15 Recently published Hall measurements in micrometer small and thin graphite flakes, peeled off from HOPG samples, showed a positive and nearly field independent Hall coefficient at T = 0.1 K up to 8 T applied fields. 18 A positive Hall coefficient was also observed in similar graphite flakes at 77 ≤ T ≤ 300 K, which decreased with temperature, it was field independent to µ 0 H ≃ 1 T, decreasing at higher fields.…”

Section: Introductionmentioning

confidence: 96%

“…14. The temperature dependence of the zero-field Hall coefficient for the "best" Kish specimen was interpreted 15 taking into account the trigonally warped Fermi surfaces in the standard Slonczewski-Weiss-McClure's model 16,17 . Interestingly, the lesser the perfection of the Kish graphite samples the larger was the field where the Hall coefficient changed sign RH > 0 for long mean free path, RH < 0 for short mean free path or at higher fields.…”

Section: Introductionmentioning

confidence: 99%

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On the low-field Hall coefficient of graphite

et al. 2014

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We have measured the temperature and magnetic field dependence of the Hall coefficient (RH) in three, several micrometer long multigraphene samples of thickness between ∼ 9 to ∼ 30 nm in the temperature range 0.1 to 200 K and up to 0.2 T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields RH is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.

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Section: Introductionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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On the low-field Hall coefficient of graphite

et al. 2014

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“…with N A (E F , T ) and N D (E F , T ) being the acceptor and donor concentrations. Several Hall effect results [29][30][31][32][33][34][35][36]41] suggest that graphite should be degenerated with a Fermi-level located inside the valence band with a free carrier concentration of the order of 10 17 cm −3 at 300 K. [41,61] We assume density of states effective masses of the order of one hundredth of the electron rest mass for a parabolic band approximation. Using these constraints, we can solve the charge neutrality condition only, if a certain concentration of shallow acceptor states are incorporated.…”

Section: Simulation Of the Spectramentioning

confidence: 99%

“…-Hall effect: A further example of the influence of defects in graphite samples is the sign of the Hall coefficient. Out of thirteen published studies on the Hall coefficient of different graphite samples (not few-layers graphene) [29][30][31][32][33][34][35][36][37][38][39][40][41], nine reported positive Hall coefficient at a certain field and temperature range [29][30][31][32][33][34][35][36]41]. The differences in the Hall coefficient have been partially explained by taking into account SF within the graphite matrix [41].…”

Section: Introductionmentioning

confidence: 99%

Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

Ariskina

Schnedler

Esquinazi

et al. 2021

Phys. Rev. Materials

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Tunneling atomic force microscopy (TUNA) was used at ambient conditions to measure the current-voltage (I-V ) characteristics at clean surfaces of highly oriented graphite samples with Bernal and rhombohedral stacking orders. The characteristic curves measured on Bernal-stacked graphite surfaces can be understood with an ordinary self-consistent semiconductor modeling and quantum mechanical tunneling current derivations. We show that the absence of a voltage region without measurable current in the I-V spectra is not a proof of the lack of an energy band gap. It can be induced by a surface band bending due to a finite contact potential between tip and sample surface. Taking this into account in the model, we succeed to obtain a quantitative agreement between simulated and measured tunnel spectra for band gaps (12 . . . 37) meV, in agreement to those extracted from the exponential temperature decrease of the longitudinal resistance measured in graphite samples with Bernal stacking order. In contrast, the surface of relatively thick graphite samples with rhombohedral stacking reveals the existence of a maximum in the first derivative dI/dV , a behavior compatible with the existence of a flat band. The characteristics of this maximum are comparable to those obtained at low temperatures with similar techniques.

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