Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition

Abstract

Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk singlecrystal SiGe and Si substratesHall mobilities in a temperature range of 80-300 K have been measured in fully strained Si 1Ϫx Ge x and partially strain-compensated p-type Si 1ϪxϪy Ge x C y alloy layers grown on Si ͑100͒ by ultrahigh vacuum chemical vapor deposition. The effect of the addition of C on strain compensation of Si 1Ϫx Ge x films has been studied by high-resolution x-ray diffraction analysis. The Hall hole mobility is found to increase with decreasing compensative strain or effective Ge content in the layer throughout the studied temperature range. The effect of a Si-cap layer on the hole mobility of Si 1ϪxϪy Ge x C y film has been investigated.