1997
DOI: 10.1016/s0026-2692(96)00038-9
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Heat transport in masks for deep X-ray lithography during the irradiation process

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1997
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Cited by 13 publications
(2 citation statements)
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“…The temperature trend during the exposure process is explained above. In addition to the approximate estimate proposed, the temperatures of the x-ray mask and film fixed to a cooled substrate were calculated using the heat conductivity equation, as previously demonstrated [42][43][44]. For an average electron current of 70 mA in the synchrotron source at an electron energy of 1.2 GeV, a helium pressure in the exposure chamber of 80 mTorr, a proximity of 350 µm, a scanning speed of 20 mm s −1 , and a scanning amplitude of 30 mm, the overheating of the x-ray mask with a diameter of 25 mm was approximately 1 • relative to the substrate.…”
Section: Thermal Expansion Of X-ray Maskmentioning
confidence: 99%
“…The temperature trend during the exposure process is explained above. In addition to the approximate estimate proposed, the temperatures of the x-ray mask and film fixed to a cooled substrate were calculated using the heat conductivity equation, as previously demonstrated [42][43][44]. For an average electron current of 70 mA in the synchrotron source at an electron energy of 1.2 GeV, a helium pressure in the exposure chamber of 80 mTorr, a proximity of 350 µm, a scanning speed of 20 mm s −1 , and a scanning amplitude of 30 mm, the overheating of the x-ray mask with a diameter of 25 mm was approximately 1 • relative to the substrate.…”
Section: Thermal Expansion Of X-ray Maskmentioning
confidence: 99%
“…The thermoplastic deformation of masks for soft XRL has previously been extensively studied (We[ls, et al, 1988;Vladimirsky et al, 1989;Yamazaki et 31.. 1994;Neumann et al, 1997). However, these studies involve exposures at significantly lower x-rav power than at the APS and use thin membranes and absorber coatings.…”
Section: "4"mentioning
confidence: 99%