Heat treatment of amorphous silicon p-i-n solar cells with high-pressure H2O vapor

Takenezawa, Jun; Hasumi, Masahiko; Sameshima, Toshiyuki; Koida, Takashi; Kaneko, Tsutomu; Karasawa, Masayoshi; Kondō, Makoto

doi:10.1016/j.jnoncrysol.2012.01.057

Cited by 7 publications

(2 citation statements)

References 8 publications

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“…Many passivation technologies, formation of thermally grown SiO 2 layers, hydrogenation treatment, and field-effect passivation caused by induced charges at the interfaces of SiN/Si or Al 2 O 3 /Si, have been developed. [10][11][12][13][14][15][16][17][18][19][20][21][22] Thermally grown SiO 2 , formed by oxidizing the silicon surface above 1000 °C, makes an excellent surface passivation layer with a stable SiO 2 /Si interface and a low density of carrier recombination defect states. 11) Hydrogenation treatment terminates dangling bonds at silicon surfaces and decreases the surface recombination velocity.…”

Section: Introductionmentioning

confidence: 99%

Passivation of cut edges of crystalline silicon by heat treatment in liquid water

Hasumi

Sameshima

Mizuno

2023

Jpn. J. Appl. Phys.

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We report on the effective passivation of cut edges of n-type (100) crystalline silicon by forming thin oxide layers achieved by heat treatment in liquid water at 90oC for 2 h followed by heating in air atmosphere at 300oC for 1 h. The mechanical cut with the (110) oriented cleaved edge markedly decreased the photo-induced effective minority carrier lifetime τeff to 6.9×10-4 s, which was 0.22 times the initial value of 3.2×10-3 s which the region 0.5 cm apart from the edge maintained. The present passivation treatment improved reduction of τeff to 0.43, for which τeff were 4.0×10-4 s at the edge and 9.4×10-4 s at 0.2 cm from the edge. The analysis with a simple model of carrier diffusion in the lateral direction resulted in that the recombination velocity at the cut edge, which was initially higher than 2000 cm/s, was decreased to 50 cm/s by the present treatment, while the recombination velocity at the sample surface was increased from 8 (initial) to 46 cm/s probably because of field-induced-depletion effect.

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Section: Introductionmentioning

confidence: 99%

Passivation of cut edges of crystalline silicon by heat treatment in liquid water

Hasumi

Sameshima

Mizuno

2023

Jpn. J. Appl. Phys.

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“…We have reported that high-pressure H 2 O vapor heat treatment is effective for decreasing surface recombination velocity at the SiO x =Si interface at low temperatures. [25][26][27][28][29][30] Oxygen vacancies in SiO x layers and interfaces have been effectively oxidized in high-pressure H 2 O vapor. The formation of a thin passivation layer with a low recombination velocity and a low density of fixed charges at low temperatures is still attractive for metal-insulator-semiconductor (MIS) type devices.…”

Section: Introductionmentioning

confidence: 99%

Passivation of silicon surfaces by heat treatment in liquid water at 110 °C

Nakamura¹,

Sameshima²,

Hasumi³

et al. 2015

Jpn. J. Appl. Phys.

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We report the effective passivation of silicon surfaces by heating single-crystalline silicon substrates in liquid water at 110 °C for 1 h. High photoinduced effective minority carrier lifetimes τ eff were obtained ranging from 8.3 ' 10 %4 to 3.1 ' 10 %3 s and from 1.2 ' 10 %4 to 6.0 ' 10 %4 s for the n-and p-type samples, respectively, under 635 nm light illumination, while the τ eff values of the initial bare samples were lower than 1.2 ' 10 %5 s. The heat treatment in liquid water at 110 °C for 1 h resulted in low surface recombination velocities ranging from 7 to 34 cm/s and from 49 to 250 cm/s for the n-and p-type samples, respectively. The photo-conductivity of the n-type sample was increased from 3.8 ' 10 %3 (initial) to 1.4 ' 10 %1 S/cm by the present heat treatment under air-mass (AM) 1.5 light illumination at 100 mW/cm 2 . The thickness of the passivation layer was estimated to be only approximately 0.7 nm. Metal-insulator-semiconductor-type solar cells were demonstrated with Al and Au metal formation on the passivated surface. Rectified current voltage and solar cell characteristics were observed. The open circuit voltages were obtained to be 0.52 and 0.49 V under AM 1.5 light illumination at 100 mW/cm 2 for the n-and p-type samples, respectively.

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