Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Abstract

Heteroepitaxial growth of 3C–SiC on (110) Si substrates by chemical vapor deposition was carried out, and the grown epitaxial layers were investigated by high resolution transmission electron microscopic (HRTEM) analysis. The interface structure between 3C–SiC and Si substrates depended on the flow rate of C3H8 during the carbonization process. In the case of the growth under C3H8=0.4 sccm, the interface was flat and 3C–SiC layer was grown epitaxially on (110) Si substrate in a well-lattice-matched relationship of (110) Si//(111) 3C–SiC and [1̄10] Si//[1̄10] 3C–SiC. In contrast, the interface was rough under C3H8=1.2 sccm and polycrystalline 3C–SiC grew without epitaxial relationship to the substrate. HRTEM observations revealed that an atomically flat (110) Si substrate surface is significant in order to grow high quality 3C–SiC with suppressing the generation of stacking faults.

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

“…Moreover, it is well known that the heteroepitaxial growth between SiC and Si causes defects in silicon underneath the interface, such as voids and channels going down deep into the substrate. [8][9][10][11][12][13][14][15][16][17] These defects are crucial in the generation and propagation of the process-related defects in the SiC film; voids in silicon could be the reason of the twinned domains and misfit dislocations in the 3C-SiC layer. The presence of these voids is attributed to the outdiffusion of silicon from substrate in order to take part to the reaction and to create the overlying SiC layer.…”

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

“…[14][15][16][17][18][19][20][21] However, the mismatches of lattice parameters and thermal expansion coefficients may cause defects and strain at the interface of 3C-SiC (111) and Si (111). In 2004, Nishiguchi 24 first reported the heteroepitaxial growth 3C-SiC (111) on Si (110) substrate with smaller lattice mismatch. In 2004, Nishiguchi 24 first reported the heteroepitaxial growth 3C-SiC (111) on Si (110) substrate with smaller lattice mismatch.…”

“…Crystallographic defects in 3C-SiC films, mainly stacking faults, 20 antiphase domains 22 and micro-twins 23 are led by mismatch in lattice parameters. Due to the smaller lattice mismatch between 3C-SiC (111) and Si (110), [24][25][26] Si (110) is a potential candidate of epitaxial growth for high quality 3C-SiC (111). However, Si (110) was seldom used as substrate for epitaxial growth because of special reconstruction and strong anisotropy.…”

SiC polytypes process affected by Ge predeposition on Si(111) substrates

“…Silicon (Si) is one of the most common substrates in semiconductor technology. The growth of 3C-SiC on silicon substrate with controlled residual stress and smooth interfaces is challenging because of the large difference in lattice-and thermal expansion mismatch (20% and 8% at 473 K, respectively) [1]. There are different approaches to improve the quality of the SiC/Si system [2,3], one of these approaches is the modification of (111) Si surfaces by metalorganic chemical vapour deposition of germanium (Ge) [4][5][6][7][8][9] or by Ge deposition prior to the SiC epitaxial growth at low temperatures by using solidsource molecular beam epitaxy (SSMBE) [10].…”