Heteroepitaxial growth of InSb films on the patterned Si(001) substrate

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

“…While CdTe is the only semiinsulating lattice-matched substrate available for InSb growth, it is difficult, however, to avoid the formation of the In 2 Te 3 precipitates at the InSb/CdTe interface [43,44]. Hence, many alternative materials (viz., Si, GaAs, InP, sapphire, and mica) have been chosen as substrates for preparing InSb epifilms [2,[15][16][17][19][20][21][22][23][24][25][26][27][28][29][30][31][32] by molecular beam epitaxy, liquid-phase epitaxy [18,30], metalorganic chemical vapor deposition (MOCVD) [20][21][22]31], metalorganic magnetron sputtering [32,45], and two-step growth process [46] methods. Despite a large (14.6%) lattice mismatch between InSb and GaAs, the semi-insulating GaAs is considered as an attractive substrate due to high chemical stability and resistivity.…”