Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Abstract

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films

“…The limited crystallite size gives broader peak. The smaller FWHM values indicated the better crystalline quality possessed by the sample calcined under 600˚C [10].…”

Real-Time Ellipsometry at High and Low Temperatures

“…B. Gallas et al 90 investigated the formation of oxide layer on Si for reflective dielectric mirror applications, whereas S.C. Deshmukh et al 91 monitored metal–organic vapor-phase epitaxy of GaN for optoelectronics. A versatility of other effects has also been investigated including oxidation of InSb/GaAs ( T = 523 → 573 K) 92 and Si ( T = 1200 K) 18 surfaces or HT effects in Li-doped ZnO. 93 …”