Heterogeneous Integrated III–V Laser on Thin SOI With Single-Stage Adiabatic Coupler: Device Realization and Performance Analysis

Pu, Jing; Krishnamurthy, Vivek; Ng, Doris K. T.; Lim, Kim Peng; Lee, Chee-Wei; Tang, Kun; Kay, Anthony Yew Seng; Loh, Ter-Hoe; Tjiptoharsono, Febiana; Wang, Qian

doi:10.1109/jstqe.2015.2422474

Cited by 13 publications

(5 citation statements)

References 22 publications

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“…This issue can be mitigated by using a metal, e.g., gold, as a bonding layer [159] or by bonding the membrane directly on the Si substrate after removal of the SiO 2 BOX layer [160,161]. The use of thin III-V membranes in the wafer bonding and transfer printing approaches is ideal to implement vertical mode coupling via efficient adiabatic mode coupling between III/V and SOI waveguides or to design hybrid coupled modes [162][163][164][165].…”

Section: Pick-and-place Of Light Sources Onto Soimentioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

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Section: Pick-and-place Of Light Sources Onto Soimentioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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“…Several groups have numerically and experimentally demonstrated highly efficient mode coupling in the III-V=Si taper by varying the length, width or tip width of the taper structure. 25,37,[44][45][46][47] In terms of mode coupling, a thick Si waveguide (>500 nm) is preferable because a thin Si waveguide (<400 nm) causes a large difference in the mode shape compared with that of a III-V=Si waveguide. 37) Nevertheless, we adopted a 220-nm-thick Si waveguide that exhibits the advantages of structural compatibility with other Si photonic devices as well as a high optical confinement ability in the gain region.…”

Section: Design Of Iii-v/si Hybrid Devicesmentioning

confidence: 99%

GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N₂ plasma-activated bonding

Hayashi

Suzuki

Inoue

et al. 2016

Jpn. J. Appl. Phys.

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III–V/Si hybrid integration with direct bonding is an attractive method of realizing an electrophotonic convergence router with a small size and a low power consumption. Plasma-activated bonding (PAB) is an effective approach for reducing thermal stress during the bonding process because PAB achieves a high bonding strength with low-temperature annealing. This time, the fabrication of a GaInAsP/silicon-on-insulator (SOI) hybrid laser with Si ring-resonator-type reflectors was demonstrated by N2 PAB. By measuring the lasing spectra, we confirmed the reflective characteristics resulting from the cascaded Si ring resonators. We also investigated kink characteristics, which occur around the threshold current, of the current–light output (I–L) characteristics, and successfully approximated the kink characteristics by considering saturable absorption occurring at the III–V/Si taper tip. The taper structure was investigated in terms of a passive device as well as an active device, and a structure for eliminating saturable absorption was proposed.

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“…[18,35,36] For flip-chip integration approach, the coupling between III-V gain waveguide and Si waveguide is typically through waveguide via butt coupling from the edge of the chip [17] or vertical coupling onto the chip through grating coupler, [37,38] while for transfer printing, hybrid bonding, and direct growth approaches, evanescent wave coupling is typically adopted. [25,29,[39][40][41] Direct growth approach, compared with the heterogeneous/bonding integration approach, provides the advantages of relatively lower manufacturing cost via the cheaper substrate and larger scalability through waferscale III-V epitaxy. [25,26] The recent works on flip-chip integration, transfer printing integration, and hybrid bonding are summarized in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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Heterogeneous Integrated III–V Laser on Thin SOI With Single-Stage Adiabatic Coupler: Device Realization and Performance Analysis

Cited by 13 publications

References 22 publications

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N₂ plasma-activated bonding

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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Heterogeneous Integrated III–V Laser on Thin SOI With Single-Stage Adiabatic Coupler: Device Realization and Performance Analysis

Cited by 13 publications

References 22 publications

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2 plasma-activated bonding

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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Product

Resources

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GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N₂ plasma-activated bonding