Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates

Stratta, Andrea; Mouawad, Bassem; Antonini, Mattia; Lillo, Liliana De; Empringham, Lee; Johnson, C.M.

doi:10.1109/jestpe.2020.2989805

Cited by 5 publications

(2 citation statements)

References 48 publications

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“…A new integration methodology is investigated in [39] for a standard basic power cell (SBPC) circuit, with the aim of integrating an inductor on power module substrates together with the switching devices, in order to improve its power density and thermal management. The proposed concept consists of bonding copper U-shapes, as shown in Figure 20a, representative of individual turns of the windings on the substrate that offer an enhanced thermal exchange between the inductor and the cooling system, resulting in an increased current density for a given power level.…”

Section: Integrated Inductor On Power Module Substratementioning

confidence: 99%

Review on the Traditional and Integrated Passives: State-of-the-Art Design and Technologies

et al. 2021

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With the increased necessity of a high power density and efficient system in aerospace and marine industries, integrated motor drives provide an excellent solution in the modern era. Therefore, a close structural and functional integration of passive components has become a prerequisite task to make a compact overall system. This article reviews the existing motor drives system with integrated passive technologies. To start, the design aspect of the traditional and integrated filter inductors, using the area product approach, is discussed. Subsequently, layouts of traditional and integrated inductors are presented. The available capacitor technologies, suitable for integration, are also discussed with pros and cons of each capacitor type.

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Section: Integrated Inductor On Power Module Substratementioning

confidence: 99%

Review on the Traditional and Integrated Passives: State-of-the-Art Design and Technologies

et al. 2021

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“…Additionally, advanced gate drivers offer active Miller clamping or digitally controlled active gate driving to reduce the switching slope and to protect the device in a failure event before it is permanently destroyed [12]. However, these correction techniques add complexity and put limitations, especially in power modules where passive and semiconductor components need to be integrated into the same package [13].…”

Section: Introductionmentioning

confidence: 99%

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs

Almpanis

Antoniou

Evans

et al. 2022

2022 IEEE Energy Conversion Congress and Exposition (ECCE)

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Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the n-IGBT device structure. This paper investigates the phenomenon of unintentional turn-on occurring due to high dV/dt produced during switching transients and analyses the impact of design parameters such as the channel length, the p-well doping and the oxide thickness for their ability to suppress it.

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