2016 IEEE 66th Electronic Components and Technology Conference (ECTC) 2016
DOI: 10.1109/ectc.2016.373
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Heterogeneous Integration of Microscale Gallium Nitride Transistors by Micro-Transfer-Printing

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Cited by 11 publications
(6 citation statements)
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“…This flow is shown in Figure 4. [24], [25], [26]. Additional processing is needed for release, printing and interconnect.…”
Section: Micro-transfer-printing Gan On Cmosmentioning
confidence: 99%
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“…This flow is shown in Figure 4. [24], [25], [26]. Additional processing is needed for release, printing and interconnect.…”
Section: Micro-transfer-printing Gan On Cmosmentioning
confidence: 99%
“…The devices are printed to a Si CMOS wafer and then interconnected using Cu RDL traces. [24] Around the chiplets additional area is required in both x and y directions for the release trenches, typically these are designed with a width of 10microns. In one direction non under-etched area is used to form the anchor regions (Figure 5b).…”
Section: Micro-transfer-printing Gan On Cmosmentioning
confidence: 99%
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“…1). To illustrate and to solve this co-design problem, we exemplarily utilize a promising new assembly technology called micro-transfer printing (µTP) [4]- [7].…”
Section: Imentioning
confidence: 99%
“…The source wafer can carry different components (such as passive or active devices), referred to as source dies, to be integrated into a heterogeneous system. In order to release the dies from the source wafer, wet chemical undercut etching is performed prior to the actual transfer process [8], [9]. The target wafer comprises the target dies on which the source dies shall be printed.…”
Section: M -T Pmentioning
confidence: 99%