Heterogeneous silicon light sources for datacom applications

Liang, Di; Kurczveil, Géza; Huang, Xiaoping; Zhang, Chong; Srinivasan, Sudharsanan; Huang, Zhihong; Seyedi, M. Ashkan; Norris, Kate J.; Fiorentino, Marco; Bowers, John E.; Beausoleil, Raymond G.

doi:10.1016/j.yofte.2017.12.005

Cited by 21 publications

(16 citation statements)

References 59 publications

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“…In addition to the full silicon approaches, huge efforts have also been witnessed in developing silicon hybrid photonic devices, which target high modulation speed as well as compact device footprint, low insertion loss and as-low-as-possible driving voltage [91,92]. These devices are demonstrated through different platforms, including hybrid organic-silicon modulators [93], hybrid graphene-silicon modulators [94], hybrid BTO silicon modulators [95], hybrid III-V silicon modulators [96], and hybrid LiNbO 3 silicon modulators [97] etc. Among these demonstrations, hybrid III-V/silicon or hybrid LiNbO 3 /silicon modulators present outstanding performance, however, only modulators using bulk III-V and LiNbO 3 materials have been successfully used in commercial products since hybrid integration will introduce new instabilities which additionally raising the cost.…”

Section: Hybrid Silicon Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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Section: Hybrid Silicon Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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“…[4][5][6] Thus, the integration of laser light sources with Si substrates has become one of the main bottlenecks in the advancement of optical communication technology. [7][8][9] In this study, we used a hydrophilic method to bond InP to Si and SiO 2 /Si substrates at room temperature, resulting in InP/Si and InP/SiO 2 /Si substrates, respectively. An LD was then grown on the InP surface of the substrates via metal-organic vaporphase epitaxy (MOVPE), which avoids the problem of dislocation generation associated with direct growth of LDs on Si substrates and improves the quality of the LD.…”

Section: Introductionmentioning

confidence: 99%

“…[ 4-6 ] Thus, the integration of laser light sources with Si substrates has become one of the main bottlenecks in the advancement of optical communication technology. [ 7-9 ]…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

Han

Tsushima

Shirai

et al. 2021

Physica Status Solidi (a)

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The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to a SiO 2 /Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven-quantum-well-structured LD are grown by low-pressure metal-organic vapor-phase epitaxy. After the pulsed power supply of a high-mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/ SiO 2 /Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface-electrode-structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO 2 /Si substrate is compared with that of an LD grown on an InP/Si substrate.

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“…Furthermore, the integration of the laser source directly on silicon enables the scaling of the aggregate bandwidth of transceivers to the Terabit/s range. [5] There are multiple ways to integrate lasers with silicon photonic circuits. Typical integration schemes include hetero-epitaxy of III-V materials [6,7], flip-chip bonding [8] and wafer bonding [9].…”

Section: Introductionmentioning

confidence: 99%

13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Uvin¹,

Kumari²,

Groote³

et al. 2018

Opt. Express

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In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100°C is obtained. Threshold current densities as low as 205 A/cm were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers.

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Heterogeneous silicon light sources for datacom applications

Cited by 21 publications

References 59 publications

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

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Heterogeneous silicon light sources for datacom applications

Cited by 21 publications

References 59 publications

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

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Product

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Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate