Heterojunction PIN diode switch

Hoag, David; Brogle, J.; Boles, Timothy; Curcio, D.; Russell, David L.

doi:10.1109/mwsym.2003.1210928

Cited by 11 publications

(2 citation statements)

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“…al describes "It was found that the recombination rate for electrons at the P+ GaAs -I-region junction is sizable in comparison to the P+ AlGaAs heterojunction. The combination of lower recombination rates and higher carrier injection will yield a greater number of carriers thus lowering the effective resistivity of the I-region'' [1]. Indeed average measured insertion loss response for a SP3T switch manufactured in GaAs and AlGaAs shows difference of 0.12 dB at 20GHz.…”

Section: Discussionmentioning

confidence: 99%

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Ka band high power AlGaAs PIN diode switches

Rozbicki

Brogle

Jain

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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In this paper we present the design and performance of millimeter wave MMIC switches in the patented MA-COM AlGaAs heterojunction PIN Diode process that allow us to produce high power and low insertion loss devices. The design process from a reflective SPDT switch to a non-reflective version of the switch, with intense use of HFSS and ADS software, is presented. These switches were designed to meet demanding requirements: low insertion loss less than 0.8 dB, 40dBm peak power and 37dBm CW power, and 30dB isolation.

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Section: Discussionmentioning

confidence: 99%

“…The switches presented here use AlGaAs/GaAs based heterojunction technology [1] that provides PIN diodes with reduced series resistance.…”

Section: Introductionmentioning

confidence: 99%