Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(001)

Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy

“…4). These results are roughly half the values recently published [16,18] indicating the achieved comparatively good quality of the GaN layers. For analyzing the selection process reciprocal space maps around the GaN(1 0 1 4) reflection were measured at different azimuth positions of 01 and 301 (Fig.…”

“…It has been reported that an offorientation of the substrate allows a preferred growth of one certain alignment of AlN on Si(0 0 1) grown by MBE, whereas the second one is suppressed [15]. Recently, this effect was confirmed on MOVPE-grown GaN on Si(0 0 1) [16], but up to now, no devices have been reported. results in an oxide-free, hydrogen-terminated Si surface [17].…”

Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates

“…But the main problem when growing on Si(0 0 1) is the different surface symmetry with respect to hexagonal Wurtzite-type GaN, which leads to the occurrence of two in-plane alignments of c-axis oriented crystallites, rotated by 901 [5]. An approach to obtain flat and coalesced GaN layers on Si(0 0 1) is the use of slightly off-oriented substrates of about 41 [6,7], and recently, some first devices have been reported. InGaN-based LEDs have been realized by metalorganic vapor phase epitaxy (MOVPE) [8] as well as AlGaN-based FETs grown by molecular beam epitaxy (MBE) [9,10].…”

Blue light emitting diodes on Si(001) grown by MOVPE

“…This leads to the occurrence of two in-plane alignments of c-axis oriented crystallites, rotated by 30°, and thus, to the inhibition of coalescence of the GaN columns [4]. Recently, flat and mono-crystalline layers were obtained by using off-oriented substrates and high temperature AlN-based buffer structures grown by both metalorganic vapor phase epitaxy (MOVPE) [5,6], and molecular beam epitaxy [7,8]. Based on this approach, we investigate MOVPE grown InGaN/GaN-based light emitting diodes on Si(001) [9] by transmission electron microscopy (TEM), X-ray diffraction, and cathodoluminescence.…”