High-&amp;lt;tex&amp;gt;$k$&amp;lt;/tex&amp;gt;Al&amp;lt;tex&amp;gt;$_2$&amp;lt;/tex&amp;gt;O&amp;lt;tex&amp;gt;$_3$&amp;lt;/tex&amp;gt;Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High-Temperature Annealing

Kuo, C. M.; Hsu, Jih‐Tay; Huang, Szu-Wei; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Hwu, Jenn–Gwo

doi:10.1109/ted.2004.828274

Cited by 32 publications

(11 citation statements)

References 21 publications

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“…Therefore, high-k dielectric materials, e.g. Al 2 O 3 [1], HfO 2 [2], and ZrO 2 [3], are used as the gate dielectric of MOSFETs to allow the use of thicker gate dielectric and thus suppress the gate leakage current. On the other hand, due to the higher carrier mobility of Ge than Si [4], Ge has been proposed as a promising channel material for MOS devices.…”

Section: Introductionmentioning

confidence: 99%

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Jiang

Liu

et al. 2016

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Jiang

Liu

et al. 2016

Microelectronics Reliability

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“…These limitations have led to an increased interest for the deposited high dielectric constant (high-κ) gate materials with low leakage current, good thermal stability and interface characteristics comparable to SiO 2 /Si interface. Intensive studies on alternative gate dielectrics with high permittivity, such as HfO 2 [2][3][4], ZrO 2 [5,6], Al 2 O 3 [7], their silicates [8,9] and nitrides [10,11] are being made to overcome the excessive leakage current and reliability issues of conventional SiO 2 gate dielectrics in MOS devices. Considerable attention has been given to HfO 2 due to its relatively high dielectric constant , wide band gap (∼5.8 eV) and its compatibility with n ± polysilicon gate electrode material [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures

2006

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Ultrathin HfO 2 gate dielectrics have been deposited on strained Si 0.69 Ge 0.3 C 0.01 layers by rf magnetron sputtering. The polycrystalline HfO 2 film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy (HRTEM). The electrical properties have been studied using metaloxide-semiconductor (MOS) structures. The fabricated MOS capacitors on Si 0.69 Ge 0.3 C 0.01 show an equivalent oxide thickness (EOT) of 2.9 nm, with a low leakage current density of ∼4.5 × 10 −7 A/cm 2 at a gate voltage of -1.0 V. The fixed oxide charge and interface state densities are calculated to be 1.9 × 10 12 cm −2 and 3.3 × 10 11 cm −2 eV −1 , respectively. The temperature dependent gate leakage characteristics has been studied to establish the current transport mechanism in high-k HfO 2 gate dielectric to be Poole-Frenkel one. An improvement in electrical properties of HfO 2 gate dielectrics has been observed after post deposition annealing in O 2 and N 2 environments.

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“…The fundamental criteria in selecting the high-k dielectric materials are large energy bandgap, low leakage current, low interface trap density, low thermal budget, good reliability, and high thermal and chemical stabilities with the substrates [7], [8]. Many studies on the high-k dielectric materials focus on HfO 2 , ZrO 2 , La 2 O 3 , and Al 2 O 3 [7]- [14].…”

mentioning

confidence: 99%

Comparison of the Reliability of Thin $\hbox{Al}_{2} \hbox{O}_{3}$ Gate Dielectrics Prepared by In Situ Oxidation of Sputtered Aluminum in Oxygen Ambient With and Without Nitric Acid Compensation

Lin

Hwu

2011

IEEE Trans. Device Mater. Relib.

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The electrical characteristics and reliability of the aluminum oxide (Al 2 O 3 ) metal-oxide-semiconductor (MOS) capacitors were investigated under low-temperature process consideration. The simple cost-effective technique in preparing the Al 2 O 3 /SiO 2 bilayer structure as the high-k gate dielectrics was demonstrated in this paper. SiO 2 was prepared by roomtemperature anodic oxidation, and Al 2 O 3 was fabricated by room-temperature in situ natural oxidation during the dc sputtering of aluminum in Ar/O 2 ambient. Compared to the Al 2 O 3 MOS capacitors without nitric acid (HNO 3 ) compensation, significant improvements in electrical characteristics, reliability, and uniformity were achieved by utilizing HNO 3 to moderately oxidize the existing Al 2 O 3 layer. In addition, the charge trapping behaviors of our samples were also studied by time-dependent dielectric breakdown under the 1000-s constant voltage stress and constant current stress tests. It was found that the electron trapping is dominant under a low negative bias stress. However, under a high negative bias stress, the Al 2 O 3 MOS capacitors show hole trapping due to the impact ionization near the SiO 2 /Si interface. The in situ oxidation in sputtering with HNO 3 compensation is suitable for future low-temperature dielectric applications.Index Terms-Al 2 O 3 , anodic oxide, HNO 3 compensation, low temperature, metal-oxide-semiconductor (MOS) capacitor.

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High-<tex>$k$</tex>Al<tex>$_2$</tex>O<tex>$_3$</tex>Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High-Temperature Annealing

Cited by 32 publications

References 21 publications

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures

Comparison of the Reliability of Thin $\hbox{Al}_{2} \hbox{O}_{3}$ Gate Dielectrics Prepared by In Situ Oxidation of Sputtered Aluminum in Oxygen Ambient With and Without Nitric Acid Compensation

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