High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

Mudd, Garry W.; Svatek, Simon A.; Hague, Lee; Makarovsky, O.; Kudrynskyi, Z. R.; Mellor, C.J.; Beton, Peter H.; Eaves, L.; Новоселов, К. С.; Kovalyuk, Z. D.; Вдовин, Е. Е.; Marsden, Alexander J.; Wilson, Neil R.; Patanè, A.

doi:10.1002/adma.201500889

Cited by 344 publications

(310 citation statements)

References 30 publications

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“…Another chalcogenide currently emerging as a high potential material for use on optical applications is the layered hexagonal metal chalcogenide InSe, atomically thin films of which are possible to fabricate [16][17][18][19][20][21] . While in its bulk form InSe [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] is a direct gap semiconductor 37 , its electronic structure undergoes significant changes upon exfoliation to few-layer or monolayer thickness, with particularly interesting optical properties observed in recent experiments 1,38 .…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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We present a tight-binding (TB) model and k · p theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all s and p valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono-and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the Γ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, N . We find a strong dependence on N of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations 1 . Also, we find that the conduction band electrons are relatively light (m ∝ 0.14 − 0.18me), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the Γ-point, which is found for up to N ∝ 6.

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Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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“…Due to the numerous materials in the family of 2D vdW crystals, such as graphene, hexagonal boron nitride (hBN), metal dichalcogenides (MoS 2 , MoSe 2 , WS 2 , etc), III-VI semiconductors (InSe, In 2 Se 3 , GaSe, GaTe, etc), and elemental semiconductors (black phosphorus, bP), a large and diverse variety of heterostructures are possible. This has already led to the successful fabrication of photodetectors, light emitting diodes, and high mobility field effect transistors [1,2,[4][5][6][7][8][9][10][11][12][13]. Among these vdW crystals, γ-InSe, a direct-band gap semiconductor, is attracting increasing interest.…”

Section: Introductionmentioning

confidence: 99%

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

et al. 2017

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Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for several applications. Here we report on the chemical reactivity of γ-InSe, a recent addition to the family of 2D vdW crystals. We demonstrate that, unlike other 2D materials, InSe nanolayers can be chemically stable under ambient conditions. However, both thermal-and photo-annealing in air induces the oxidation of the InSe surface, which converts a few surface layers of InSe into In 2 O 3 , thus forming an InSe/In 2 O 3 heterostructure with distinct and interesting electronic properties. The oxidation can be activated in selected areas of the flake by laser writing or prevented by capping the InSe surface with an exfoliated flake of hexagonal boron nitride. We exploit the controlled oxidation of p-InSe to fabricate p-InSe/n-In 2 O 3 junction diodes with room temperature electroluminescence and spectral response from the near-infrared to the visible and near-ultraviolet ranges. These findings reveal the limits and potential of thermal-and photo-oxidation of InSe in future technologies.

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High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

Cited by 344 publications

References 30 publications

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Engineering p – n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

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