High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping

Abstract

The Cn metal interconnect under TLP stress can not be treated as the constant current stress. The increase in the metal interconnect length at GGNMOS drain can improve device's MM failure threshold but degrade device's HBM failure threshold and IT2. INTRODUCTIONThis paper presents the influence of the Cu metal intCKOMec1 length and width on device ESD performance and the dynamic thermal behavior of interconnect nnder the TLP stress. The stress using the TLP system is usually

Achieving electrothermal stability in interconnect metal during ESD pulses

“…This is the case with TLP for our test patterns with R 0 =10.4 ohms, as temperatures rise to αΔT=2 or 3. TLP has a long history of being used for pulsed metal studies [11,[1][2][3][4][5]. Solving the network for TLP with step V 0 /s and source Zs=50 ohms is fairly simple; the initial power source is…”

“…(7)(8)(9), participate along with material properties to determine the maximum temperature T max as obtained by iterative solution of Eqs. (4)(5). Thus the relative values of R 0 and 50 ohms (or other choice for Zs) are crucial to electrothermal stability.…”

“…(4)(5) to find the temperature waveform. As stated above, HBM with 1500 ohms source impedance will usually be an almost perfect current source and will not react to metal line resistance increase during the pulse.…”

Evaluation of stability and robustness of poly-Si resistors with different dopant concentrations

“…The transmission line pulse (TLP) test is an important assessment for evaluating the capability of an electrical component to resist short current pulse stress. 23,24) The reliability of poly-Si resistors under pulse voltage stress at different duty cycles and frequencies for a negative temperature coefficient of resistance (TCR) poly-Si resistor was evaluated. However, the analysis of the positive TCR poly-Si resistor or the investigation of the pulse time width dependence of the pulse breakdown pulse current has not been conducted.…”

A voltage base electrothermal model for the interconnection and E-Fuse under the DC and pulse stresses

“…Caused by the Joule-heating induced the resistance change, both the current and voltage of the interconnection during the TLP and DC stresses are not constants. The time variable voltages and currents of the metal and salicided poly interconnections under the TLP stresses have been observed and discussed in the early literatures [7], [8].…”