High efficiency integral III-N/II-VI blue-green laser converter

Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructures

“…The main reason of such dramatically reduced efficiency is a difficulty of collecting and focusing the output radiation of the commercial III-N LD due to its high output-beam divergence. Moreover, the exciting wavelength of the III-N LD is notably shorter than that of the InGaN/GaN optically pumped laser structure used in the optically pumped converter [6], which induces additional energy losses. Further optimization of the design of the II-VI laser structure is also expected to improve the converter performance.…”

“…The waveguide was designed to obtain the optical confinement factor as high as G=0.021. The structure exhibited a superior performance both under optical pumping with an N 2 -laser [3] and as an active part of the optically pumped laser converter [6]. The active region of the second structure (#4585) contains five electronically coupled CdSe QD active layers, that provides the twice larger optical confinement factor G=0.042.…”

“…Another way to take advantage of the unique lasing properties of the ZnSe-based nanostructures in the green range is to integrate them within a violet-green laser converter together with an optically pumped III-Nitride laser [5]. The performed optimization of the II-VI QD laser design has resulted in a conversion efficiency of the optically pumped converter as high as 14% and a pulse output power 3 W at the wavelength of 540 nm (300 K) [6].…”

Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

“…The principal possibility to achieve the higher values of external quantum efficiency and output optical power (up to 14% and 3 W, respectively) was demonstrated earlier [9], when the optically pumped blue InGaN/GaN multiple QW laser was used as a high power (up to 25 W) excitation source. Further reduction of the threshold power as well as increase in the CdSe QDS laser efficiency could be achieved by enhancement of the optical confinement factor, e.g.…”

MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer

“…This reduction in substrate cost will lead to a reduction in overall cost of production of GaN-based LEDs. Second, MOCVD growth of high quality GaN on Si will allow for monolithic integration of GaN-based optoelectronics with Sibased microelectronics, opening the door for a wide range of novel applications in communications, computation, and related areas [9,10]. There are major technical challenges that must be overcome, however, if the integration of these technologies is to have an impact on the microelectronics and optoelectronics industries in the future.…”