High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application

Wann, H.-J.; Hu, Chenming

doi:10.1109/55.468277

Cited by 46 publications

(19 citation statements)

References 7 publications

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“…Recently, the concept of Quasi-NonVolatile-Memories (Q-NVM) has been proposed [1]. It has PROGRAM/ERASE times significantly faster than EEPROM, yet a retention time significantly longer than DRAM.…”

Section: Introductionmentioning

confidence: 99%

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Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric

Rosmeulen

Sleeckx²,

Meyer³

2001

31st European Solid-State Device Research Conference

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Implementation of a charge trapping layer in the dielectric of Metal-OxideSemiconductor (MOS) structures provides a means for realizing Quasi-Non-VolatileMemory (Q-NVM) cells. We fabricated MOS capacitors containing a Silicon-RichOxide (SRO) layer with excessSilicon content ranging between 10 and 19.5 at%. Capacitance-Voltage characteristics exhibit a large hysteresis, shifting the flatband voltage over circa 6 V. The flatband voltage window collapses gradually over time. SRO layers with the lowest amount of excess Silicon have the best retention performance, with a flatband voltage difference of 2.45 V after 10,000 s and an extrapolated collapse of the window at 7.4 years.

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Section: Introductionmentioning

confidence: 99%

“…Several approaches have been reported in literature, including Silicon-and Germanium-implanted SiO 2 [2], Silicon Nitride [1], CVD-deposited Silicon nanocrystals [3] and aerosol-based nanocrystals [4].…”

Section: Introductionmentioning

confidence: 99%

Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric

Rosmeulen

Sleeckx²,

Meyer³

2001

31st European Solid-State Device Research Conference

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“…The applications Manuscript for low voltage EEPROM's are television tuners, postage meters, automobiles, neural networks, solid-state disks, electronic video and sound storage, and so-called smart cards. More recently [2], [3] dynamic random access memories (DRAM) replacement has been discussed as SONOS cell areas of 6 are possible with a simplified process technology, which reduces step-coverage problems and relaxes lithography requirements. In this instance, long-term retention is not as important as in EEPROM and NVRAM applications.…”

Section: Introductionmentioning

confidence: 99%

A low voltage SONOS nonvolatile semiconductor memory technology

White

Yang

Purwar³

et al. 1997

IEEE Trans. Comp., Packag., Manufact. Technol. A

110

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The triple-dielectric polysilicon-blocking oxidesilicon nitride-tunnel oxide-silicon (SONOS) structure is an attractive candidate for high density E 2 PROM's suitable for semiconductor disks and as a replacement for high-density dynamic random access memories (DRAM's). Low programming voltages (5 V) and high endurance (greater than 10 7 cycles) are possible in this multidielectric technology as the intermediate Si 3 N 4 layer is scaled to thicknesses of 50Å. The thin gate insulator and low programming voltage enable the scaling of the basic memory cell and associated complementary metal-oxide-semiconductor (CMOS) peripheral circuitry on the memory chip. A SONOS 1TC memory cell is proposed in a NOR architecture with a cell area of 6F 2 , where F is the technology feature size. A 0.20 m feature size permits a 1TC area of 0.24 m 2 for advanced 1-Gb nonvolatile semiconductor memory chips. A physical model is presented to characterize the erase/write, retention and endurance properties of the nonvolatile semiconductor memory (NVSM) SONOS device.

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“…Many different type of memory-cell structures, employing discrete-trap type storage nodes, have been demonstrated in the literature. In these devices the storage medium consists either of natural traps, normally in correspondence of a nitride layer [3,4,5], or semi-conductor nanocrystals [2,6].…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Memory-Cell Structures Employing Ultra-Thin Al2O3 Film as Storage Node

Fernandes

Salvo²,

Masson³

et al. 2001

31st European Solid-State Device Research Conference

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High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application

Cited by 46 publications

References 7 publications

Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric

Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric

A low voltage SONOS nonvolatile semiconductor memory technology

Electrical Characterization of Memory-Cell Structures Employing Ultra-Thin Al2O3 Film as Storage Node

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