High energy density metal-insulator-metal capacitors with Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin films

Abstract

An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation J. Appl. Phys. 112, 083707 (2012) Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012) Theory of the suspended graphene varactor Appl. Phys. Lett. 101, 153102 (2012) Complex transport behavior accompanying domain switching in La0.1Bi0.9FeO3 sandwiched capacitors Appl. Phys. Lett. 101, 152901 (2012) Comment on "Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses" [J.

Electrical and Energy Storage Performance of Eu‐Doped PbZrO3 Thin Films with Different Gradient Sequences

“…Due to the field induced antiferroelectric‐to‐ferroelectric (AFE–FE) phase transition, PbZrO 3 (PZ)‐based materials and some other antiferroelectrics (AFs) have become the most promising candidates for such applications . During the phase switching process of PZ, the energy storage density can reach as high as ~50 J/cm . There are several reports on energy storage performance of PZ‐based AFE materials, such as PLZ, PSZ, and PLZST .…”

“…H IGH-PERFORMANCE film capacitors have recently attracted attention owing to both fundamental scientific interest and practical device. [1][2][3][4] Due to the field induced antiferroelectric-to-ferroelectric (AFE-FE) phase transition, PbZrO 3 (PZ)-based materials and some other antiferroelectrics (AFs) have become the most promising candidates for such applications. 5,6 During the phase switching process of PZ, the energy storage density can reach as high as~50 J/cm.…”

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

“…In case of SE, log (I/T 2 ) vs V 1/2 should gives a straight line having slope near to the optical dielectric constant of the materials. 25 In present case Fig. 4(a), at low field and temperature, BFO follows non-linear current-voltage behavior, ruled out the SE effect; it fits linearly at high temperatures and electric fields, but the slope of curve ($0.50 þ/À 0.05) does not match the optical dielectric constant of BFO, and more importantly rules out SE as the dielectric constants cannot be less than one.…”

Relationship between bond stiffness and electrical energy storage capacity in oxides: Density functional calculations forh-La2O

“…High dielectric constant materials, e.g., relaxor ferroelectrics, often show nonlinear characteristics with decreasing κ(E) and relatively low breakdown fields, although composites such as (Ba,Sr)TiO 3 with MgO or ZnO have been proposed to improve this and some high energy perovskite alloys have been found. 5 In other cases, particularly antiferroelectric capacitors, the effective dielectric constant can increase with field, leading to increased storage capacity. 2,6,7 Relations E b ∼ κ −0.5 or E b ∼ κ −0.65 have been suggested based on fits for a range of oxide materials [SiO 2 , HfSiON, Ta 2 O 3 , and Pb(Zr,Ti)O 3 ].…”