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An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation J. Appl. Phys. 112, 083707 (2012) Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012) Theory of the suspended graphene varactor Appl. Phys. Lett. 101, 153102 (2012) Complex transport behavior accompanying domain switching in La0.1Bi0.9FeO3 sandwiched capacitors Appl. Phys. Lett. 101, 152901 (2012) Comment on "Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses" [J.

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This paper explores designs for the implementation of high sensitivity accelerometers based on Fabry-Pérot Interferometers. Although such structures have the potential to achieve µg resolutions, design and implementation challenges can be limiting. This paper discusses the creation of such devices using two distinct proof mass and optical designs: one of a monolithic flexure with a thin film metallic reflector and another of an elastomeric flexure with a thin film multilayer dielectric reflector. Each device was fabricated, tested and characterized and conclusions about the advantages and disadvantages of the different design features are presented.