High-Frequency CMOS Active Inductor: Design Methodology and Noise Analysis

Zito, Domenico; Pepe, Domenico; Fonte, A.

doi:10.1109/tvlsi.2014.2332277

Cited by 15 publications

(7 citation statements)

References 35 publications

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“…To validate the performance of proposed AGI, we have done the noise analysis. An in‐noise and out‐noise 40 have been evaluated for the proposed inductor as given in Figures 15 and 16.…”

Section: Realization Of Agi Using the Proposed Cciismentioning

confidence: 99%

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Jogad

Alkhammash

Afzal

et al. 2021

Int J Numerical Modelling

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In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)‐based negative class AB second generation current conveyors (CC) (CNTFET‐CCII and CMOS‐CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and voltage bandwidths, terminal X and Y impedances at lesser total harmonic distortions and reduced power consumption have been observed in the proposed CNTFET‐based CCII− in comparison to its CMOS‐based counterpart. Further, a CNTFET‐based active grounded inductor (AGI) has been designed and simulated for the first time using the proposed CNTFET‐CCII− and our recently designed CNTFET‐CCII+ and has been compared with the CMOS‐based AGI. To validate the performance of the simulated AGI's, single input multi output current mode filter and third‐order high pass Butterworth filter have also been designed and simulated. The simulation results reveal that the performance of the CNTFET‐AGI‐based applications are close to ideal response with less power consumption and temperature insensitivity with reduced active chip die area of 0.16 μm2 and can be efficiently used for low voltage, low power, and high frequency applications.

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“…To validate the performance of proposed AGI, we have done the noise analysis. An in‐noise and out‐noise 40 have been evaluated for the proposed inductor as given in Figures 15 and 16.…”

Section: Realization Of Agi Using the Proposed Cciismentioning

confidence: 99%

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Jogad

Alkhammash

Afzal

et al. 2021

Int J Numerical Modelling

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show abstract

“…A detailed design methodology and noise analysis is reported in Zito et al . []. The results of the noise analysis, simulations, and measurements prove that the input noise of the proposed AI is very low compared to any other topologies, and it is mainly due to the thermal noise of the parasitic resistance of the primary spiral of the integrated transformer [ Zito et al ., ].…”

Section: Mm‐wave Active Inductormentioning

confidence: 99%

“…For this reason, one of the most severe challenges in the radio‐frequency integrated circuits is the realization of on‐chip high quality factor (Q) LC filters. Active inductors (AIs) have the potential to provide a solution [ Zito et al ., ].…”

Section: Introductionmentioning

confidence: 99%

50 GHz active‐LC CMOS oscillator: Theoretical study and experimental proofs

2017

Self Cite

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A 50 GHz cross‐coupled differential‐pair oscillator with a high‐Q active inductor in the LC tank has been designed and fabricated in 65 nm bulk complementary metal‐oxide semiconductor (CMOS) technology. The principle of operation is explained and a complete theoretical study is carried out. The analytical expressions for the open loop transfer function, oscillation frequency, start‐up condition, tank impedance, and phase noise are derived. The results of the analytical study are compared with those obtained by SpectreRF simulations in the Cadence design environment. Measurement results of the stand‐alone mm‐wave active inductor show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally the implementation of high‐Q active inductors operating at the millimeter waves in CMOS technology. The measurement results of the oscillator show a phase noise of −85 dBc/Hz at 1 MHz frequency offset from the carrier when the active inductor is switched off and −91 dBc/Hz when it is switched on, leading to a phased noise reduction of 6 dB.

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“…Large inductances are often B Longjie Zhong zhong.longjie@163.com 1 Institute of Electronic CAD, Xidian University, Xi'an, China 2 School of Science and Engineering, Teesside University, Middlesbrough TS1 3BA, UK needed if operational frequency of a circuit is not very high, but they are difficult to be integrated into an integrated circuit (IC) due to the large chip area required. There have been a number of attempts to develop inductor simulators, which can perform the analog function of inductance [1][2][3][4][5][6][7][8][9][10][11][12]. The most commonly used structures of these inductor simulators are composed of multiple passive components and complicated operational modules such as current conveyor (CC) [2][3][4][5], current feedback operational amplifier (CFOA) [6], operational trans-conductance amplifier (OTA) [7], current backward trans-conductance amplifier (CBTA) [8] and current differencing buffered amplifier (CDBA) [9].…”

Section: Introductionmentioning

confidence: 99%

“…This is because that they attempt to achieve functional flexibility, i.e., to be reconfigured to form other circuit functions such as frequency dependent negative resistor (FDNR), while aiming at low-frequency applications. Other structures [10][11][12] use fewer and less complicated components to be structurally simple and to minimize the effect of parasitic parameters. However, these are primarily used for high-frequency or RF applications.…”

Section: Introductionmentioning

confidence: 99%

An improved CMOS-based inductor simulator with simplified structure for low-frequency applications

Zhong

Lai

et al. 2016

J Comput Electron

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In this paper, an improved inductor simulator structure is presented, which can be configured as either grounded or floating inductor simulator with low component count. To achieve simplified structure, inductor simulator circuits are designed using a minimal number of transistors and small capacitance, rather than the complex components/modules such as current convey and operational trans-conductance amplifier which are traditionally used. The simulation results based on 0.5 µm CMOS process parameters show that the proposed structure is able to produce a broad range of inductance values and compared to other similar structures, it provides wider operational frequency bandwidth for the same or comparable inductance value. Furthermore, the structure can be implemented with much smaller chip area using a small capacitance in the circuit, but at the price that it has a higher minimum operational frequency compared to other structures.

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High-Frequency CMOS Active Inductor: Design Methodology and Noise Analysis

Cited by 15 publications

References 35 publications

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

50 GHz active‐LC CMOS oscillator: Theoretical study and experimental proofs

An improved CMOS-based inductor simulator with simplified structure for low-frequency applications

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