High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Microwave noise modeling of FinFETs

“…By increasing V gs , NF min and R n initially decrease and then increase. The bias dependence of NF min is in agreement with the fact that the available gain shows an opposite behavior [16], while the bias dependence of R n can be explained by the fact that this parameter is assumed to increase by increasing g ds =g 2 m [16,26]. It can be observed that the parameter R n increases by lowering V gs at 0.4 V, due to the reduction of g m , and by increasing V gs at 1.2 V, due to the increase of g ds (see Fig.…”

“…Such parameter exhibits values not lower than 180 X under the investigated bias conditions. These high values are not unexpected since typically MOS transistors show an R n much higher than the one obtained with III-V semiconductor devices, because of their relatively low g m [26]. It should be noted that C opt shows low frequency kinks, as observed in the case of S 11 , since these two parameters are strongly linked.…”

“…Section 3 analyzes both the experimental results and the model validation. Particular attention is devoted to the analysis of the obtained noise parameters with respect to the operating bias condition, since the study of the bias dependence of the microwave noise modeling for CMOS technology is of fundamental importance [11,16,[23][24][25][26]. Finally, Section 4 presents the main remarks.…”

Ultra-low noise strained Si/SiGe n- and Ge/SiGe p-MODFETs

“…At high drain current, R n increases because the noise current in the channel rises faster than g m . We underline the significantly lower R n of n-MODFET as compared to MOS devices [6], which is favorable in low noise matched circuit conditions.…”

Validation of the 2 Temperatures Noise Model Using Pre-Matched Transistors in W-Band for Sub-65 nm Technology

“…In order to overcome this problem, pre-matched transistors have been designed to minimize the influence of the parasitic access elements. These test structures (other than LNA) have been used to validate the 2 temperatures noise model [1] in millimeter-wave frequency. First, this model is extracted up to 40 GHz and validated only using F50 measurements (without the 4 noise parameters).…”