1999
DOI: 10.1016/s0257-8972(99)00058-4
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High intensity pulsed ion beam sources and their industrial applications

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Cited by 165 publications
(49 citation statements)
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“…The ion current portion of the total diode current does not exceed 10%; 12,13 in fact it is mainly electrons drifting in the A-K gap which contribute to the total diode current. We showed that the instability of the ion beam generation only weakly depends on the shot-to-shot variation in the total diode current, the standard deviation of the total current did not exceed 5%-7%.…”
Section: Discussionmentioning
confidence: 97%
See 1 more Smart Citation
“…The ion current portion of the total diode current does not exceed 10%; 12,13 in fact it is mainly electrons drifting in the A-K gap which contribute to the total diode current. We showed that the instability of the ion beam generation only weakly depends on the shot-to-shot variation in the total diode current, the standard deviation of the total current did not exceed 5%-7%.…”
Section: Discussionmentioning
confidence: 97%
“…13 Intense ion beams were generated by a selfmagnetically insulated diode with a graphite potential electrode. The generator was operated in double-pulse mode: the first pulse is of negative polarity (300-500 ns, 100-150 kV), and this is followed by a second pulse of positive polarity (150 ns, 250-300 kV).…”
Section: Experimental Apparatus and Diagnosticsmentioning
confidence: 99%
“…7, obtained at d = 55 and 190 mm, in accordance with the following formula [12]: (1) where h m and h 0 are the maximum penetration depth and the residual imprint depth of a Vickers pyramid, respectively. This empirical parameter characterizes a relative recovery of the imprint after unloading and can be used to estimate the value of the yield point for the coating material, which in turn defines the crack ing susceptibility of the coating.…”
Section: Nanohardness and Young's Modulusmentioning
confidence: 99%
“…Deposition by pulsed high power ion beams is of special interest, since the coatings obtained in this way keep the stoichiometry of the target mate rial and the specific energy consumption in this case is lower than in other deposition methods [1][2][3].…”
Section: Introductionmentioning
confidence: 99%
“…The high-intensity pulsed ion beam (HIPIB) or intense pulsed ion beam (IPIB) technique has been developed for materials processing during the last two decades, where two kinds of applications are mainly evolved, i.e., surface modification of materials and syntheses of thin films and nanoparticles [1][2][3]. The principle of this technique is to induce surface remelting and/or ablation of materials by depositing a short pulse (,1 ms) of ion-delivered high-density energy (,10 2 J/cm 2 ) into a certain depth (,10 mm) dependent on the ion range in irradiated materials.…”
Section: Introductionmentioning
confidence: 99%