High mobility thin film transistors based on zinc nitride deposited at room temperature

Dominguez, Miguel A.; Pau, J. L.; Gómez‐Castaño, Mayte; Luna-López, J. A.; Rosales, Pedro

doi:10.1016/j.tsf.2016.10.053

Cited by 18 publications

(15 citation statements)

References 19 publications

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“…4 Several reports have shown transistor performance using top-gated and bottom-gated configurations. 12,13 The bottom-gated devices also exhibited photoconductivity when the devices were illuminated with visible/infrared light. On the other hand, large photoconductive gains were obtained in top-gate transistors.…”

Section: Thin Film Transistorsmentioning

confidence: 99%

Zinc nitride thin films: basic properties and applications

et al. 2017

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Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250 °C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.

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Section: Thin Film Transistorsmentioning

confidence: 99%

Zinc nitride thin films: basic properties and applications

et al. 2017

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“…Being this last, the most commonly obtained. The contact resistance can be extracted experimentally by the extrapolation of the width-normalized resistance (RW), obtained from the linear regime of the output characteristics I ds vs. V ds , for different channel lengths and gate voltages V gs , as indicate in Figure 1 [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…The problem associated with a high contact resistance is that it induces a potential drop at the drain/source contacts, affecting the electrical performance of the device [1][2][3][4]. On short channel TFTs, as the channel length is reduced, the source/drain contact resistance may be higher than the channel resistance, as result the electrical behaviour may be governed by the contact resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, there is not a value of channel length to determine if short channel effects will be exhibited on the electrical characteristics of the TFT. Reported TFTs exhibited short channel effects at channel lengths L lower than 20 μm, meanwhile other TFTs (some with high contact resistance) did not exhibited short channel effects at L of 10 μm [1,[3][4][5][6][7][8][9][10]. Moreover, a TFT may exhibit high contact resistance effects at considered long channel values.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, a TFT may exhibit high contact resistance effects at considered long channel values. These effects can be presented as superlinear behaviour or current crowding in output characteristics [1,11,12]. It is always desirable to have a low contact resistance; however, the channel resistance must be dominant.…”

Section: Introductionmentioning

confidence: 99%

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Metal-Semiconductor Interfaces in Thin-Film Transistors

Dominguez¹,

Rosales²,

Torres³

et al. 2017

Different Types of Field-Effect Transistors - Theory and Applications

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The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is no doped film to be used. In this chapter, some alternatives to improve this interface are analysed. Also, the influence of this interface on the electrical stability of these devices is presented.

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Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

Sirotti,

Böhm,

Sharp

2024

Adv Materials Inter

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Zinc nitride (Zn3N2) is a promising semiconductor for a range of optoelectronic and energy conversion applications, offering a direct bandgap of 1.0 eV, large carrier mobilities, and abundant constituent elements. However, the material is prone to bulk oxidation in ambient environments, which has thus far impeded its practical deployment. While previous approaches have focused on stabilizing the material via integration of ZnO surface layers, these strategies introduce additional challenges regarding elevated processing temperatures and limited control of interface properties. In this study, it is shown that amorphous GaN thin films can serve as highly stable protection layers on Zn3N2 surfaces and can be deposited at the same growth temperature and in the same deposition system as the underlying semiconductor. The GaN‐capped Zn3N2 structures exhibit long‐term stability, surviving over 3 years of exposure to ambient conditions with no discernible alterations in composition, structure, or electrical properties. Notably, the amorphous GaN coatings can even impede Zn3N2 oxidation under prolonged aqueous exposure. Thus, this study offers a solution to stabilize Zn3N2 in ambient conditions, providing a viable pathway to its utilization in robust and high‐performance electronic devices, such as thin film transistors and solar energy conversion systems.

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High mobility thin film transistors based on zinc nitride deposited at room temperature

Cited by 18 publications

References 19 publications

Zinc nitride thin films: basic properties and applications

Zinc nitride thin films: basic properties and applications

Metal-Semiconductor Interfaces in Thin-Film Transistors

Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

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High mobility thin film transistors based on zinc nitride deposited at room temperature

Cited by 18 publications

References 19 publications

Zinc nitride thin films: basic properties and applications

Zinc nitride thin films: basic properties and applications

Metal-Semiconductor Interfaces in Thin-Film Transistors

Ultrastable Zn3N2 Thin Films via Integration of Amorphous GaN Protection Layers

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Product

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Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers