2017
DOI: 10.1117/12.2253044
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Zinc nitride thin films: basic properties and applications

Abstract: Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250 °C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization… Show more

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Cited by 4 publications
(3 citation statements)
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“…Even with added CapEx (making the total 7.07 $/m 2 )considering the encapsulation advantages of the coating, it may still be justified to be able to use cheaper encapsulation layers to reduce the overall module cost . Notably, the coatings in this work are non-conductive and therefore cannot serve as a bottom electrode, but they can be used as the top electrode, or, materials such as ZnO or ZnO:Al could be deposited from metal targets using the demonstrated reactive-sputtering approach …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Even with added CapEx (making the total 7.07 $/m 2 )considering the encapsulation advantages of the coating, it may still be justified to be able to use cheaper encapsulation layers to reduce the overall module cost . Notably, the coatings in this work are non-conductive and therefore cannot serve as a bottom electrode, but they can be used as the top electrode, or, materials such as ZnO or ZnO:Al could be deposited from metal targets using the demonstrated reactive-sputtering approach …”
Section: Resultsmentioning
confidence: 99%
“…60 Notably, the coatings in this work are non-conductive and therefore cannot serve as a bottom electrode, but they can be used as the top electrode, or, materials such as ZnO or ZnO:Al could be deposited from metal targets using the demonstrated reactive-sputtering approach. 61…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Zinc nitride (Zn 3 N 2 ) is one of the few metastable semiconductors that, at the same time, exhibit remarkable electronic properties, including a direct band gap of ∼1.4 eV, a low resistivity (<10 –2 Ω·cm), and a high carrier concentration (>10 18 cm –3 ). , One additional advantage of zinc nitride films is the fast and cost-effective growth, typically carried out by magnetron sputtering. , Zinc nitride has been used for devices such as thin-film transistors, , photodetectors, and sensors . More recently, the possibility to form nanowires and colloidal nanocrystals has widened this range of applications too.…”
Section: Introductionmentioning
confidence: 99%