High performance amorphous oxide thin film transistors with self-aligned top-gate structure

Chang

Symp Digest of Tech Papers

et al. 2018

We propose a method to form low‐resistance amorphous zinc tin oxide thin film (a‐ZTO) by Ar plasma. The results show that the Ar plasma treatment can effectively decrease the resistivity of the a‐ZTO. The ZTO film treated with Ar plasma at suitable time and moderate operating power, exhibits a low sheet resistance of 2.3 kΩ/□. With the help of PECVD‐SiOx coverage layer, the sheet resistance of Ar‐plasam treated ZTO is enhanced and increases only one order of magnitude after annealing at 230 °C. As a result, an optimized Ar plasma treatment for fabrication of low‐resistance a‐ZTO film is presented.

Section: Introductionmentioning

confidence: 99%

P‐1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment

Chang

Symp Digest of Tech Papers

et al. 2018

Symp Digest of Tech Papers

“…The capacitance is usually a major concern in many applications. Recently, selfaligned top-gate TFT has attracted an explosive attention owning to its simple technology, low parasitic capacitance and good scalability as compared to bottom-gate one [2] [3]. However, the stability of the top-gate amorphous oxide TFT is still an issue.…”

Section: Introductionmentioning

confidence: 99%

P‐20: Effects of N₂O Plasma Treatment Time on the Performance of Self‐Aligned Top‐Gate amorphous oxide Thin Film Transistors

Liang

Zhang

Zhou

et al. 2017

We report on the effects of N 2 O plasma treatment time on the performance of self-aligned top-gate amorphous oxide thin-film transistors (TFTs). N 2 O plasma is treated on the surface of the active layer. It is shown that the treatment effect is timedependent. With the increase of treatment time, the electrical characteristics and bias stress stability are improved significantly. However, adverse effects appear with the time prolonging due to the damage of excess plasma. The optimum performance of a-IGZO and a-IZO TFTs is obtained with the N 2 O plasma treatment time at 90s and 240s, respectively.

“…The metal-oxide thin-film transistor (TFT) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 is a revolutionary technology for displays due to its high mobility and simple process. The high mobility of zinc-oxide (ZnO)-based materials was attributed to the spatially spread metal ns orbitals with isotropic shape, which is possible to overlap the neighboring metal ns orbitals 7 .…”

mentioning

confidence: 99%

“…The high mobility of zinc-oxide (ZnO)-based materials was attributed to the spatially spread metal ns orbitals with isotropic shape, which is possible to overlap the neighboring metal ns orbitals 7 . However, the high performance ZnO-based TFTs of InGaZnO 7 , bi-layer InSnO/InGaZnO 11 , InZnO 13 , and GaZnON 18 compounds usually contain Indium (In) or Gallium (Ga), which are rare elements in earth’s crust. In addition, device performance is sensitive to the moisture degradation and atomic composition of these compound.…”

mentioning

confidence: 99%

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Shih

Chin

et al. 2016

Sci Rep

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.