High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

Zhang, Zhiyong; Wang, Sheng; Peng, Lian‐Mao

doi:10.1007/s11434-011-4791-6

Cited by 14 publications

(7 citation statements)

References 58 publications

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“…According to the electrical properties of CNT, it can be sorted into two different types of CNT: metallic CNT (m-CNT) and semiconducting CNT (s-CNT). As m-CNT can bear large electric current, it could be used as connector in electronic devices [1], while s-CNT is sensitive to voltage and other parameters, it is widely used in nano-logic circuit, sensors, and other nano-electronic devices [2,3].…”

Section: Introductionmentioning

confidence: 99%

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

et al. 2014

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Nowadays, one of the bottlenecks which hinder the development and application of carbon nanotube (CNT) nano device is that no pure semiconducting CNT (s-CNT) or metallic CNT (m-CNT) can be obtained, and for solving this problem scientists proposed some methods on preparation or separation, but all the results still should be detected and feedback to the process for further improving the preparation and separation methods. Thus, it is very important to measure and distinguish the electrical properties of CNT. For that, scientists proposed a method to measure CNT electrical properties based on DC electrostatic force microscope (EFM) mode, which distinguishes m-CNT from s-CNT according to different scan line shape to CNT with different electrical properties. But, we discovered that the probe lift-up height will seriously affect the shape of the scan line, which makes this method not reliable in distinguishing m-CNT from s-CNT. In this paper, the authors deeply researched the influence of probe lift-up height and also gave corresponding theoretical analysis and explanation, which will greatly improve the method of detecting CNT electrical properties by EFM.

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Section: Introductionmentioning

confidence: 99%

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

et al. 2014

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“…Single‐walled semiconducting CNTs (SWCNTs) have attractive advantages for realizing high‐performance TFTs on flexible substrates due to their remarkable mechanical robustness, high‐carrier‐mobility, low‐temperature, and large‐area processability. In recent results, beyond the electrical performance, many efforts to convert the polarity of SWCNTs from p‐type to n‐type using effective doping strategies have been reported for CMOS applications . The high electrical performance of SWCNTs promises their utilization in integrated logic and display backplane driving circuits.…”

Section: Fundamental Description Of Inkjet Printing and Electronic Mamentioning

confidence: 99%

Recent Progress in Inkjet‐Printed Thin‐Film Transistors

2019

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Drop‐on‐demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low‐cost and flexible thin‐film devices. Over the past decades, a variety of inkjet‐printed applications including thin‐film transistors (TFTs), radio‐frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high‐performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory‐scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing‐based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device‐yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low‐dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new‐concept printed switching devices, are also discussed.

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“…The topics cover different areas of CNT study, including their preparation, properties, and application [6][7][8][9][10][11][12][13]. The authors have mainly summarized the progress achieved in the respective research groups.…”

Section: Prefacementioning

confidence: 99%

“…The structure and properties of CNTs have been studied, as well as their various applications. Sc and Y contacts can be used to obtain high performance ballistic n-type field-effect transistors [6]. This resulted in a new doping-free strategy to fabricate CNT-based CMOS devices and integrated circuits.…”

Section: Prefacementioning

confidence: 99%

Preface

Xie

2012

Chin. Sci. Bull.

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PrefaceIn the last two decades, carbon nanotubes (CNTs) have attracted tremendous attention. A CNT can be considered a seamless cylinder formed by rolling up graphene sheets, which are composed of hexagonal sp 2 carbon networks. A single-walled CNT (SWCNT) has only one graphene layer. A multi-walled CNT (MWCNT) consists of a series of concentric graphene layers with an interlayer distance similar to graphite. The unique structure of CNTs endows them with extraordinary properties, for example, superior conductivity of both electricity and heat, outstanding mechanical properties, and excellent chemical and thermal stability. In particular, SWCNTs can behave as semiconductors with a tunable direct band gap determined by their structure. These properties make CNTs an important material both for scientific research and applications.Although tubular carbon nanostructures were observed earlier [1,2], it is the report by Iijima [3] in 1991 that launched the huge interest in CNTs. They observed MWCNTs under a high resolution transmission electron microscope. In 1993, Iijima et al. [4] and Bethune et al. [5] reported the observation and preparation of SWCNTs, respectively. Since then, CNTs have been studied intensively. Chinese scientists entered this field shortly after its beginning and have contributed much. Therefore, we have published this special topic on CNTs to celebrate the twentieth anniversary of CNT research.This special topic contains eight review articles. The topics cover different areas of CNT study, including their preparation, properties, and application [6][7][8][9][10][11][12][13]. The authors have mainly summarized the progress achieved in the respective research groups. CNTs have been prepared using different strategies and obtained in various forms to meet the requirements of different applications. Mass production of bulk-form CNTs with tunable diameter and length has been realized [8]. This is a significant progress in the nanoscale process engineering of CNTs. When using anodic aluminum oxide membranes as templates, the length, diameter and wall thickness of CNTs can be controlled [11]. The preparation of different forms of SWCNTs is also discussed. Well-aligned ultralong SWCNTs ready for building nanodevices have been directly grown on substrates by chemical vapor deposition (CVD) [13]. Free-standing SWCNT networks have been fabricated either directly by CVD or arc discharge as well as by post-growth treatment [12]. A new condensed form of SWCNTs, SWCNT crystals, has been prepared using a series of diamond wire drawing dies [10]. The structure and properties of CNTs have been studied, as well as their various applications. Sc and Y contacts can be used to obtain high performance ballistic n-type field-effect transistors [6]. This resulted in a new doping-free strategy to fabricate CNT-based CMOS devices and integrated circuits. CNTs are also ideal materials for building optoelectronic devices such as light emitters, photodetectors, and photovoltaic devices [7]. SWCNTs can generate electricity...

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High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

Cited by 14 publications

References 58 publications

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

The influence of probe lift-up height on CNT electrical properties measurement under EFM DC mode

Recent Progress in Inkjet‐Printed Thin‐Film Transistors

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