High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

“…Accordingly, the devices' saturation drain currents and transconductances were strongly affected by the side wall total surface states and the surface-depleted effect of the tri-gate channel upon varying the widths and via-holelengths of the GaN HEMTs. Compared with previously reported devices [23], our device has reached a new milestone for low-on-resistance, normally off GaN HEMTs.…”

“…A group at Soochow University reported that the value of V th underwent a systematic positive shift when the nanochannel width was less than 90 nm [22]. Researchers at Kyungpook National University considered the partial strain relaxation of the channels' sides to explain the behavior [23]. A team at the Massachusetts Institute of Technology simulated the threshold voltage after surface passivation of GaN-based HEMTs and determined that positive values occurred when the width of the channel was less than 100 nm [24], the result of sidewall effects and increased tensile stress that decreased the electron concentration in the channel.…”

Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

“…Nanochannel FinFETs do not only suppress short-channel effect by device scailing, but also offer high-speed application, high current drivability, low drain leakage current and excellent subthreshold behavior [15][16][17].…”

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

“…GaN-based fin-channel field-effect transistors (finFETs) have been reported with Si-doped GaN junctionless and high-electron mobility AlGaN/GaN heterostructure channels where the gate wraps around fins with enhanced electrostatics to nearly or fully deplete the channel. [20][21][22] However, the main drawbacks for GaN are cost and the availability of native substrates for low-defect density homoepitaxial growth. In this letter, we present a finFET with arrays of parallel Sn-doped Ga 2 O 3 fin channels formed by top-down plasma etching to achieve normally-off operation on a native (100) semi-insulating b-Ga 2 O 3 substrate.…”

“…A similar study of GaN finFETs deduced a V bi $ 0.74 eV in the ungated region and was explained by Al 2 O 3 /GaN interfacial chemistry by XPS. 20,29 Furthermore, in the gated region, the band-bending can increase an additional $1.15 eV due to the difference in metal work functions of Ni (A m ¼ 5.15 eV) and Ga 2 O 3 20 where v s is the electron affinity of Ga 2 O 3 ($3.5 to 4.0 V). 27,30 However, this does not consider trap-assisted tunneling for thin Al 2 O 3 gate oxide, 27 and it remains unclear how the V bi(ug) compensates for the band-bending normally induced by a gate contact without thorough XPS characterization of our particular interface.…”