High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Mohammed, Ahmed; Moussa, Walied A.; Lou, Edmond

doi:10.3390/s110201819

Cited by 30 publications

(27 citation statements)

References 35 publications

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“…They have been widely used as stress and strain sensors. In the works of [2]- [9] have demonstrated that it is possible to model, the thermal behavior of the piezoresistive pressure sensor by adopting one approach based on the thermal behavior of piezoresistance. In this work, we modeled the thermal behavior of the piezoresistive pressure sensor by adopting a simple approach based on the thermal drift of the piezoresistive coefficients.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

Beddiaf¹,

Kerrour²,

Kemouche³

2014

JST

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Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and ( ) This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.

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Section: Introductionmentioning

confidence: 99%

“…For these reasons, we adopted the model of Kanda [7]. A comparative study of the model with experimental results [8] [9] demonstrated that Kanda's model gives good estimate of the piezoresistance coefficient. After this, we will then devote a study of the effect of temperature and doping concentration on the piezoresistivity.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

Beddiaf¹,

Kerrour²,

Kemouche³

2014

JST

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“…Finite Element Analysis (FEA) has been widely used in sensor analysis and design [22–24] as an alternative to the analytical models. So far, only a few studies have been found [18,25–29] with respect to QTFs.…”

Section: Introductionmentioning

confidence: 99%

Finite Element Analysis of Electrically Excited Quartz Tuning Fork Devices

Oria

Otero

González

et al. 2013

Sensors

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Quartz Tuning Fork (QTF)-based Scanning Probe Microscopy (SPM) is an important field of research. A suitable model for the QTF is important to obtain quantitative measurements with these devices. Analytical models have the limitation of being based on the double cantilever configuration. In this paper, we present an electromechanical finite element model of the QTF electrically excited with two free prongs. The model goes beyond the state-of-the-art of numerical simulations currently found in the literature for this QTF configuration. We present the first numerical analysis of both the electrical and mechanical behavior of QTF devices. Experimental measurements obtained with 10 units of the same model of QTF validate the finite element model with a good agreement.

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“…Assuming the same thermal expansion in the x-direction (biaxial stress: σ 11 = σ 22 ) and identical longitudinal and transversal piezoresistive coefficients for p-type silicon along the [110] directions, the thermal stress offset is compensated and would not result in a response at the bridge [6] (see eq. 2: Ф = 0/π 44 >> π 11 , π 12 /α 1 T+α 2 T 2 +…= account for the TCRs of the piezoresistive element).…”

Section: Thermal Simulationmentioning

confidence: 99%

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

et al. 2011

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For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 ± 0.1) µV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n-SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

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High-Performance Piezoresistive MEMS Strain Sensor with Low Thermal Sensitivity

Cited by 30 publications

References 35 publications

The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

Finite Element Analysis of Electrically Excited Quartz Tuning Fork Devices

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

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