The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

Abstract

Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and ( ) This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.

Use of Self-Calibration Data for Multifunctional MEMS Sensor Prognostics

“…Temperature and doping levels in piezoresistors cause the most significant drift in the output characteristics of pressure sensors [25]. Considering the models available [26][27][28], the Kanda Model [29] has been selected due to the ease with which a good estimate of the piezoresistance coefficient can be computed [15,28].…”

“…being the Fermi Energy in the doped p-type Silicon and Boltzmann's constant, The coefficient 44 used in the mathematical model of the MFS was derived using (13) and (14). Studies have revealed that:  Increasing doping concentration and/or temperatures respectively cause a lowering in piezoresistive sensitivity [25] and;  The estimation of the coefficient by Kanda's method is best for doping levels up to 5x10 19 atoms/cm 3 .…”

“…The effect of the temperature on the bridge output voltage under a uniform load can be determined using the following relationship [15,25,26,28]:…”

“…The doping concentration of the piezoresistors is the primary variable that affects the sensitivity of piezoresistive sensors. The relationship between doping concentration and sensitivity can be expressed as follows [25,28]:…”

A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors

“…His study uses the electric drift for compensating offset thermal drift. In a previous paper [8] we have investigated the effect of temperature and doping level on the characteristics of such sensors. The approach to the compensation for temperature drift of offset voltage in this sensor type was proposed by U. Aljancic [7].…”