Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and ( ) This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.

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Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of  heat transfer equation considering  the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for  different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a  sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.

This paper examines the modeling, simulation and optimization of CMOS–MEMS integrated pressure sensor based on suspended gate MOSFET. The pressure Sensor consists of a square poly silicone suspended membrane, which is the movable gate of the NMOS. This NMOS is designed using 2 μm CMOS technology. The mathematical model describing the complete behaviour of the PSFET pressure sensor has been described. Finite element method (FEA) based COMSOL Multiphysics is utilized for the simulation of pressure sensor. The simulation results show that, the output current of the pressure sensor varied from 355 to 3624 μA as the pressure changed from zero to 180 kPa and high pressure sensitivity of 15,18μA/kPa. Furthermore, this study emphasizes on the influence of the channel geometric parameters on the aforementioned characteristics to optimize the sensor performance.

Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of heat transfer equation considering the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.