Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET

Abstract

This paper examines the modeling, simulation and optimization of CMOS–MEMS integrated pressure sensor based on suspended gate MOSFET. The pressure Sensor consists of a square poly silicone suspended membrane, which is the movable gate of the NMOS. This NMOS is designed using 2 μm CMOS technology. The mathematical model describing the complete behaviour of the PSFET pressure sensor has been described. Finite element method (FEA) based COMSOL Multiphysics is utilized for the simulation of pressure sensor. The simulation results show that, the output current of the pressure sensor varied from 355 to 3624 μA as the pressure changed from zero to 180 kPa and high pressure sensitivity of 15,18μA/kPa. Furthermore, this study emphasizes on the influence of the channel geometric parameters on the aforementioned characteristics to optimize the sensor performance.

Study of the thermal drifts on the piezoresistivity using mobility model and finite difference method of electric heater

“…As a consequence, square form membranes are more sensitive than circular ones [4]. For this reason and some others uses such as fields that require excellent sensitivity to pressure, the diaphragms of sensors are usually made using square or rectangular shape [16]- [18]. This prompted us to present a numerical model of Joule heating in piezoresistive pressure sensors, with a square shaped membrane [19], [20].…”