High performance RF characteristics of raised gate/source/drain CMOS with Co salicide

High-performance fully-depleted SOI RF CMOS

“…Similar behavior was observed for p-MOSFETs, where the highest is 47 GHz with 20-m gate finger and the highest is 59 GHz with the T-gate. The value of the n-MOSFET reported here is comparable to the best of bulk-Si devices [3]- [5] and the of the T-gate n-MOSFET is among the highest for Si MOSFETs, including a 0.1-m T-gate MOSFET with raised source/drain structure [4]. To the best of our knowledge, the 59 GHz is the highest reported for a p-MOSFET.…”

“…The reported here is comparable to that of SiGe bipolar transistors with an of 90 GHz [7] and is lower than MOSFETs with higher [5], [6], including a bulk-Si T-gate MOSFET [4] as well as a 0.1-m gate length partially-depleted SOI [8]. The noise power generated in our n-MOSFET, using the formula in [5], is 166 dBm/Hz, which is better than the 165 dBm/Hz for a GaAs MESFET and comparable to the 171 dBm/Hz for bulk-Si MOSFETs [5].…”

Fully-Depleted 0.25 Micron Silicon-on-Insulator MOSFET Transistors for Microwave Applications

“…It is clear that the maximum cut-off frequencies are obtained for voltages around VGS=VDS=0.9 V. [3] has obtained current gain and unilateral gain cut-off frequencies of 19 GHz and 27 GHz respectively, for 12*(5.0/0.25) transistors at 1 V. The performances are directly dependent on the control of the silicidation process on thin silicon films. Am) [5], and fmax of 60GHz and 70 GHz for 0.15 jm and 0.1 jim respectively [6].…”

A novel resonant gate driver for high frequency synchronous buck converters

“…Even in this ESR range, this resonant gate driver can still save about 50% conduction losses. If the metal pattern is used for the gate conductors, the ESR can be reduced by about tenfold [9,10] and the resonant gate driver can have more than 85% loss-saving effect.…”