High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

“…Consequently, the degradation rate is accelerated [15,20]. To reduce the possibility of electrons being trapped at the oxide-silicon interface, the current lines must be moved away and the electric field must be decreased in this zone in order to improve the device reliability, by changing the fabrication process and the device structure or layout [11,21,22]. HTSL seems to be slower than other ageing tests with these conditions (75°C-700 h).…”

Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage

“…The increasing need to achieve RF products suitable for high power applications has found in the LDMOS (Laterally Diffused MOS) transistor one of the most important devices, particularly in terms of high gain and high linearity [1]. These performance requirements are achieved by means of the introduction of a lightly doped drain (LDD) extension able to reduce the electric field between the drain and the edge of the channel.…”

Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications

“…Silicon based LDMOS technology is the leading technology for applications in RF base station power amplifiers and MMIC's [1][2][3][4] used for personal communication systems (GSM, EDGE, W-CDMA). Although new developments of compound semiconductors, such as GaAs, SiC and GaN [5], receive increasing attention, the Si based LDMOS technologies are still the preferred choice.…”