High-power extreme-ultraviolet source based on gas jets

Kubiak, Glenn D.; Bernardez, Luis J.; Krenz, Kevin D.

doi:10.1117/12.309560

Cited by 42 publications

(13 citation statements)

References 1 publication

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“…This power will give rise to severe heating of mechanical details in the vicinity of the plasma due to re-emitted and scattered out-of-band radiation as well as energetic ions and atoms. It has also been shown that the plasma will erode mechanical parts such as a nozzle in the vicinity of the plasma, 14 and that the material eroded will damage the sensitive condenser optics, thereby limiting the mirror life time. This problem will be even worse in discharge plasmas.…”

Section: Long Working Distancementioning

confidence: 99%

Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Hansson

Rymell²,

Berglund³

et al. 2002

Emerging Lithographic Technologies VI

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The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under development for EUV lithography. This paper presents some recent improvements of the technology, including the ability to operate a stable plasma at a distance of 50 mm from the nozzle, the first positive mirror-lifetime results, and improved laser-to-EUV conversion efficiency of 0.75 %/(2%BW 2πsr) at λ=13.45 nm.

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Section: Long Working Distancementioning

confidence: 99%

Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Hansson

Rymell²,

Berglund³

et al. 2002

Emerging Lithographic Technologies VI

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“…In the initial implementation, a cluster jet target [5][6] based upon the supersonic expansion of gaseous Xe into a vacuum was used in conjunction with a 40W Coherent Infinity Nd:YAG laser. During the past year, the source has been upgraded to a 1500W TRW laser (replacing the 40W Coherent Infinity laser) and the Xe cluster jet has been replaced with a liquid Xe spray jet target.…”

Section: Illuminator Subsystemmentioning

confidence: 99%

Current Status of the EUV Engineering Test Stand.

Leung

Tichenor

Replogle

et al. 2002

J. Photopol. Sci. Technol.

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The EUV Engineering Test Stand (ETS) has demonstrated the printing of static and scanned 100 nm dense features. This milestone was first achieved in 2001 with a developmental set of projection optics (P0 Box 1) and with a low power LPP source (40W drive laser). Since that time, the source has been upgraded to a 1500W (3 chains, 500W per chain) TRW drive laser. Operating with one chain (500W), the printed static images for 100 nm features are comparable to those obtained with the low power source, while exposure time was decreased by a factor of 15 to 30. One hundred nanometer dense features printed in step-and-scan mode are of the same image quality as those obtained in static imaging. The stages have demonstrated combined x any y j fitter values of 2 to 4 nm RMS over most of the wafer stage travel range, at the designed scanned speed of 10 mm/s at the wafer. This value is less than half of the designed value and provides sufficient stability to support printing of 70 nm features. EUV specific sensors at the wafer and reticle planes have been demonstrated with the TRW laser and integration will be completed later this year. The developmental projection optics (P0 Box 1) will be replaced later this year with an improved projection optics system (P0 Box 2) capable of printing 70 nm dense features.

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“…Recently, laser-produced plasma x-ray sources have been highlighted as one of the most reliable sources for extreme ultraviolet lithography (EUVL). Intensive research has been performed in this field [3][4][5]. On the other hand, laser-plasma x-ray sources have been investigated for many other applications such as x-ray microscopy [6] and absorption spectroscopy [7,8].…”

Section: Introductionmentioning

confidence: 99%

Development of Photoelectron Microscope with Compact X-Ray Source Generated by Line-Focused Laser Irradiation

Yamaguchi

Takahashi

Nishimura

et al. 2005

J. Plasma Fusion Res.

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A laboratory-sized x-ray photoelectron microscope was constructed using a compact x-ray source produced by line-focused laser irradiation. The system is a scanning type photoelectron microscope in which the x-ray beam is micro-focused via Schwarzschild optics. A compact laser-plasma x-ray source has been developed consisting of a YAG laser, a line-focus lens assembly, an Al tape-target driver and a debris prevention system. The 13.1 nm x-rays were delivered from the line plasma whose length was 0.6 to 11 mm with higher intensity than that from a pointfocused source. Schwarzschild optics having a designed demagnification of 224 and coated with Mo/Si multilayers for 13.1 nm x-rays, was set on the beamline at a distance 1 m from the source. The electron energy analyzer was a spherical capacitor analyzer with a photoelectron image detection system that was suited for detection of a burst of photoelectrons excited by pulsed x-rays of ns-order duration. Photoelectron spectra were obtained having two peaks from As 3d and Ga 3d electrons, when a GaAs wafer was used as a sample. Spatial resolution of less than 5~3 µ m was confirmed from the variation of the As 3d electron intensity along the position of the GaAs sample coated with a photo-resist test pattern.

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High-power extreme-ultraviolet source based on gas jets

Cited by 42 publications

References 1 publication

Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Current Status of the EUV Engineering Test Stand.

Development of Photoelectron Microscope with Compact X-Ray Source Generated by Line-Focused Laser Irradiation

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